Analytical Formulation of SiO₂-IL scavenging in HfO₂/SiO₂/Si gate stacks - A key is the SiO₂/Si interface reaction

Engineering

• Analytical Model 33%
• Diffusion Kinetics 33%
• Gate Stack 66%
• Interface Layer 100%
• Interface Reaction 66%
• Kinetic 66%
• Oxygen Vacancy 33%
• Scavenging 100%
• Si Interface 100%
• Si Substrate 33%
• Stages 66%

Chemistry

• Atom 33%
• Chemical Kinetics Characteristics 66%
• Chemical Reaction 33%