Angular dependency of neutron-induced multiple cell upsets in 65-nm 10T subthreshold SRAM

Ryo Harada, Shin Ichiro Abe, Hiroshi Fuketa, Taiki Uemura, Masanori Hashimoto, Yukinobu Watanabe

研究成果: Contribution to journalArticle査読

15 被引用数 (Scopus)

抄録

This paper reports neutron-induced MCU (Multiple Cell Upset) measured in 0.4-V 65-nm 10T SRAM at two incident angles of 0° and 60°. The measurement results show that the ratio of the number of measured MCUs at the angles of 60° to that at 0° is 1.13 in 0.4-V operation, while the ratio of neutrons radiated to the test chip was 50% at 60°. The spatial MCU patterns measured at 60° indicate that forward emission of secondary ions plays an important role to cause the angular dependency in 0.4-V operation. Furthermore, a Monte-Carlo simulation using PHITS (Particle and Heavy Ion Transport code System) was performed to confirm the measured angular dependency of neutron-induced MCUs. The simulation results show that the ratio of the number of MCUs at the angles of 60° to that at 0° is 1.20 and the same tendency of MCU patterns is observed. The measured angular dependency of neutron-induced MCUs is mostly reproduced by the simulated generation and transport of secondary ions.

本文言語英語
論文番号6365398
ページ(範囲)2791-2795
ページ数5
ジャーナルIEEE Transactions on Nuclear Science
59
6
DOI
出版ステータス出版済み - 2012

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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