Anisotropic layer-by-layer growth of graphene on vicinal SiC(0001) surfaces

Satoru Tanaka, Kouhei Morita, Hiroki Hibino

研究成果: Contribution to journalArticle査読

92 被引用数 (Scopus)

抄録

Epitaxial graphene is formed on vicinal SiC(0001) surfaces via high temperature annealing in vacuum. Steps act as a significant "kicker" of graphene nucleation to feed C atoms. At elevated temperatures, graphene growth is controlled by the decomposition of Si-C bonds at step edges, Si desorption, and C diffusion on the surface. The limited Si desorption is due to the dependence of the growth rate on the thickness of graphene layers. The fabricated graphene layer(s) acts as a Si-diffusion barrier, which in turn induces local thermal equilibrium between the graphene layer and the SiC surface. C atoms preferentially diffuse along the steps, resulting in anisotropic layer-by-layer growth, which is characteristic in this system.

本文言語英語
論文番号041406
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
81
4
DOI
出版ステータス出版済み - 1 6 2010

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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