Anisotropic layer-by-layer growth of graphene on vicinal SiC(0001) surfaces

Tanaka Satoru, Kouhei Morita, Hiroki Hibino

研究成果: ジャーナルへの寄稿記事

85 引用 (Scopus)

抄録

Epitaxial graphene is formed on vicinal SiC(0001) surfaces via high temperature annealing in vacuum. Steps act as a significant "kicker" of graphene nucleation to feed C atoms. At elevated temperatures, graphene growth is controlled by the decomposition of Si-C bonds at step edges, Si desorption, and C diffusion on the surface. The limited Si desorption is due to the dependence of the growth rate on the thickness of graphene layers. The fabricated graphene layer(s) acts as a Si-diffusion barrier, which in turn induces local thermal equilibrium between the graphene layer and the SiC surface. C atoms preferentially diffuse along the steps, resulting in anisotropic layer-by-layer growth, which is characteristic in this system.

元の言語英語
記事番号041406
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
81
発行部数4
DOI
出版物ステータス出版済み - 1 6 2010

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Graphite
Graphene
graphene
Desorption
desorption
Atoms
Diffusion barriers
surface temperature
atoms
Nucleation
nucleation
Vacuum
Annealing
Decomposition
decomposition
Temperature
vacuum
annealing

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

これを引用

Anisotropic layer-by-layer growth of graphene on vicinal SiC(0001) surfaces. / Satoru, Tanaka; Morita, Kouhei; Hibino, Hiroki.

:: Physical Review B - Condensed Matter and Materials Physics, 巻 81, 番号 4, 041406, 06.01.2010.

研究成果: ジャーナルへの寄稿記事

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