Anisotropic plasma chemical vapor deposition of copper films in trenches

Kosuke Takenaka, Masao Onishi, Manabu Takenshita, Toshio Kinoshita, Kazunori Koga, Masaharu Shiratani, Yukio Watanabe

研究成果: ジャーナルへの寄稿Conference article

1 引用 (Scopus)

抜粋

An ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.

元の言語英語
ページ(範囲)465-470
ページ数6
ジャーナルMaterials Research Society Symposium - Proceedings
766
出版物ステータス出版済み - 12 1 2003
イベントMaterials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 - San Francisco, CA, 米国
継続期間: 4 21 20034 25 2003

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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