Anisotropic thermal stress simulation with complex crystal-melt interface evolution for seeded growth of monocrystalline silicon

Bing Gao, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Takashi Sekiguchi, Koichi Kakimoto

研究成果: Contribution to journalArticle査読

13 被引用数 (Scopus)

抄録

To simulate the anisotropic thermal stress with complex crystal-melt interface evolution by the fixed-grid method during seeded growth of monocrystalline silicon, a new method that can solve the global stress field involving the crystal and melt regions without a requisite of accurate locations of the interface was proposed. The melt is regarded as a kind of hypothetical solid material that has isotropic material properties. Free boundary conditions along the crystal-melt interface are implicitly satisfied with all of the stress components inside the melt region being close to zero compared to those inside the crystal region. Therefore, regardless of the complexity of the interface shape, the stress field can be easily analyzed by a simple solver and a set of simple fixed grids even for extremely complex interface evolution. Results of numerical simulations in the isotropic, [001], and [111] growths show good consistence with other numerical and experimental results.

本文言語英語
ページ(範囲)5708-5714
ページ数7
ジャーナルCrystal Growth and Design
12
11
DOI
出版ステータス出版済み - 11 7 2012

All Science Journal Classification (ASJC) codes

  • 化学 (全般)
  • 材料科学(全般)
  • 凝縮系物理学

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