Anisotropic transport in graphene on SiC substrate with periodic nanofacets

S. Odaka, H. Miyazaki, S. L. Li, A. Kanda, K. Morita, S. Tanaka, Y. Miyata, H. Kataura, K. Tsukagoshi, Y. Aoyagi

研究成果: Contribution to journalArticle査読

23 被引用数 (Scopus)

抄録

Anisotropic transport in graphene field-effect transistors fabricated on a vicinal SiC substrate with a self-organized periodic nanofacet structure is investigated. Graphene thermally grown on a vicinal substrate contains two following regions: atomically flat terraces and nanofacets (atomically stepped slopes). The graphene film at a nanofacet is continuously connected between two neighboring terrace films. Anisotropic transport properties are clearly observed, indicating a difference in the graphene properties of the two regions. The observed anisotropic properties are discussed in terms of the effects of nanofacet structures on conductivity and electron mobility.

本文言語英語
論文番号062111
ジャーナルApplied Physics Letters
96
6
DOI
出版ステータス出版済み - 2010

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

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