Annealing effects on transition region at Si-SiO2 interface

Yi Qun Zhang, Akira Kikutake, Shuichi Wada, Takashi Nakashige, Dong Ju Bai, Atsushi Kenjo, Taizoh Sadoh, Hiroshi Nakashima, Noboru Teshima, Hiroshi Mori, Toshio Tsurushima

研究成果: ジャーナルへの寄稿記事

抄録

Annealing effects on transition regions at the Si-SiO2 interface for thin oxide films have been investigated. Thin oxide films with thickness less than 100Å were prepared by the following methods: (1) dry oxidation, (2) dry oxidation and subsequent annealing in an argon atmosphere, and (3) thinning of thick oxide films formed by dry oxidation. The values of barrier height for electrons at the Si-SiO2 interface have been evaluated from Fowler-Nordheim plots. The values for the samples prepared by (2) and (3) were larger than that by (1). The increase of the barrier height is attributed to the decrease of transition regions induced by annealing or oxidation for long periods. XPS and growth rate measurements were also performed for ultra thin dioxide films formed at low temperature of 600 °C. The results show that the transition regions, containing suboxides, are formed in the initial stage of oxidation. On the basis of these observations, a model of the decrease of transition regions is proposed.

元の言語英語
ページ(範囲)111-116
ページ数6
ジャーナルResearch Reports on Information Science and Electrical Engineering of Kyushu University
3
発行部数1
出版物ステータス出版済み - 3 1 1998

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Annealing
Oxidation
Oxide films
Thin films
Thick films
Argon
X ray photoelectron spectroscopy
Electrons
Temperature

All Science Journal Classification (ASJC) codes

  • Computer Science(all)
  • Electrical and Electronic Engineering

これを引用

Zhang, Y. Q., Kikutake, A., Wada, S., Nakashige, T., Bai, D. J., Kenjo, A., ... Tsurushima, T. (1998). Annealing effects on transition region at Si-SiO2 interface. Research Reports on Information Science and Electrical Engineering of Kyushu University, 3(1), 111-116.

Annealing effects on transition region at Si-SiO2 interface. / Zhang, Yi Qun; Kikutake, Akira; Wada, Shuichi; Nakashige, Takashi; Bai, Dong Ju; Kenjo, Atsushi; Sadoh, Taizoh; Nakashima, Hiroshi; Teshima, Noboru; Mori, Hiroshi; Tsurushima, Toshio.

:: Research Reports on Information Science and Electrical Engineering of Kyushu University, 巻 3, 番号 1, 01.03.1998, p. 111-116.

研究成果: ジャーナルへの寄稿記事

Zhang, YQ, Kikutake, A, Wada, S, Nakashige, T, Bai, DJ, Kenjo, A, Sadoh, T, Nakashima, H, Teshima, N, Mori, H & Tsurushima, T 1998, 'Annealing effects on transition region at Si-SiO2 interface', Research Reports on Information Science and Electrical Engineering of Kyushu University, 巻. 3, 番号 1, pp. 111-116.
Zhang, Yi Qun ; Kikutake, Akira ; Wada, Shuichi ; Nakashige, Takashi ; Bai, Dong Ju ; Kenjo, Atsushi ; Sadoh, Taizoh ; Nakashima, Hiroshi ; Teshima, Noboru ; Mori, Hiroshi ; Tsurushima, Toshio. / Annealing effects on transition region at Si-SiO2 interface. :: Research Reports on Information Science and Electrical Engineering of Kyushu University. 1998 ; 巻 3, 番号 1. pp. 111-116.
@article{588f98b60bf34b19b18e000e99c9abfd,
title = "Annealing effects on transition region at Si-SiO2 interface",
abstract = "Annealing effects on transition regions at the Si-SiO2 interface for thin oxide films have been investigated. Thin oxide films with thickness less than 100{\AA} were prepared by the following methods: (1) dry oxidation, (2) dry oxidation and subsequent annealing in an argon atmosphere, and (3) thinning of thick oxide films formed by dry oxidation. The values of barrier height for electrons at the Si-SiO2 interface have been evaluated from Fowler-Nordheim plots. The values for the samples prepared by (2) and (3) were larger than that by (1). The increase of the barrier height is attributed to the decrease of transition regions induced by annealing or oxidation for long periods. XPS and growth rate measurements were also performed for ultra thin dioxide films formed at low temperature of 600 °C. The results show that the transition regions, containing suboxides, are formed in the initial stage of oxidation. On the basis of these observations, a model of the decrease of transition regions is proposed.",
author = "Zhang, {Yi Qun} and Akira Kikutake and Shuichi Wada and Takashi Nakashige and Bai, {Dong Ju} and Atsushi Kenjo and Taizoh Sadoh and Hiroshi Nakashima and Noboru Teshima and Hiroshi Mori and Toshio Tsurushima",
year = "1998",
month = "3",
day = "1",
language = "English",
volume = "3",
pages = "111--116",
journal = "Research Reports on Information Science and Electrical Engineering of Kyushu University",
issn = "1342-3819",
publisher = "Kyushu University, Faculty of Science",
number = "1",

}

TY - JOUR

T1 - Annealing effects on transition region at Si-SiO2 interface

AU - Zhang, Yi Qun

AU - Kikutake, Akira

AU - Wada, Shuichi

AU - Nakashige, Takashi

AU - Bai, Dong Ju

AU - Kenjo, Atsushi

AU - Sadoh, Taizoh

AU - Nakashima, Hiroshi

AU - Teshima, Noboru

AU - Mori, Hiroshi

AU - Tsurushima, Toshio

PY - 1998/3/1

Y1 - 1998/3/1

N2 - Annealing effects on transition regions at the Si-SiO2 interface for thin oxide films have been investigated. Thin oxide films with thickness less than 100Å were prepared by the following methods: (1) dry oxidation, (2) dry oxidation and subsequent annealing in an argon atmosphere, and (3) thinning of thick oxide films formed by dry oxidation. The values of barrier height for electrons at the Si-SiO2 interface have been evaluated from Fowler-Nordheim plots. The values for the samples prepared by (2) and (3) were larger than that by (1). The increase of the barrier height is attributed to the decrease of transition regions induced by annealing or oxidation for long periods. XPS and growth rate measurements were also performed for ultra thin dioxide films formed at low temperature of 600 °C. The results show that the transition regions, containing suboxides, are formed in the initial stage of oxidation. On the basis of these observations, a model of the decrease of transition regions is proposed.

AB - Annealing effects on transition regions at the Si-SiO2 interface for thin oxide films have been investigated. Thin oxide films with thickness less than 100Å were prepared by the following methods: (1) dry oxidation, (2) dry oxidation and subsequent annealing in an argon atmosphere, and (3) thinning of thick oxide films formed by dry oxidation. The values of barrier height for electrons at the Si-SiO2 interface have been evaluated from Fowler-Nordheim plots. The values for the samples prepared by (2) and (3) were larger than that by (1). The increase of the barrier height is attributed to the decrease of transition regions induced by annealing or oxidation for long periods. XPS and growth rate measurements were also performed for ultra thin dioxide films formed at low temperature of 600 °C. The results show that the transition regions, containing suboxides, are formed in the initial stage of oxidation. On the basis of these observations, a model of the decrease of transition regions is proposed.

UR - http://www.scopus.com/inward/record.url?scp=11744323700&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=11744323700&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:11744323700

VL - 3

SP - 111

EP - 116

JO - Research Reports on Information Science and Electrical Engineering of Kyushu University

JF - Research Reports on Information Science and Electrical Engineering of Kyushu University

SN - 1342-3819

IS - 1

ER -