Anomalous behavior of excess energy curves of InxGa1-xN grown on GaN and InN

Y. Kangawa, T. Ito, A. Mori, A. Koukitu

研究成果: Contribution to journalArticle査読

32 被引用数 (Scopus)

抄録

We worked out the excess energies for bulk InxGa1-xN and InxGa1-xN thin films on GaN and InN in order to investigate their thermodynamic stabilities. It has been found that the excess energy maximum shifted toward x to approximately 0.80 for InGaN/GaN and x to approximately 0.10 for InGaN/InN due to the lattice constraint in contrast with x to approximately 0.50 for bulk. Moreover, it has been revealed that the excess energy for InGaN/GaN is larger than that for bulk at x>0.65. This suggests that In-rich films are less stable on GaN than bulk state. These results indicate that the lattice constraint has a significant influence on thermodynamic stabilities of thin films.

本文言語英語
ページ(範囲)401-404
ページ数4
ジャーナルJournal of Crystal Growth
220
4
DOI
出版ステータス出版済み - 12 2000
外部発表はい

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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