Anomalous Spectral Shape Evolution of Ge Raman Shift in Oxidation of SiGe

Y. Noma, W. Song, T. Nishimura, T. Yajima, A. Toriumi

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

This paper reports anomalous Raman peak shape of Ge in SiGe oxidation. The results in Raman spectroscopy in SiGe suggest that Ge precipitation occurs at the SiGe interface associated with the oxidation. Non-oxidized Ge remaining at the interface should be related to the interface degradation which should lead to poor gate stack properties. Finally, it discusses how to achieve well-behaved SiGe gate stacks by considering anomalous Raman spectrum in the oxidation.

本文言語英語
ホスト出版物のタイトル2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
出版社Institute of Electrical and Electronics Engineers Inc.
ページ199-201
ページ数3
ISBN(印刷版)9781538637111
DOI
出版ステータス出版済み - 7 26 2018
外部発表はい
イベント2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, 日本
継続期間: 3 13 20183 16 2018

出版物シリーズ

名前2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

その他

その他2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
Country日本
CityKobe
Period3/13/183/16/18

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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