Anti-surfactant in III-nitride epitaxy - quantum dot formation and dislocation termination

Satoru Tanaka, Misaichi Takeuchi, Yoshinobu Aoyagi

研究成果: ジャーナルへの寄稿記事

151 引用 (Scopus)

抄録

A new approach toward epitaxial growth of group III nitrides using an `anti-surfactant' is presented. Two unique phenomena, quantum dot formation and dislocation termination, were recognized using this approach. The presence of Si atoms as an anti-surfactant on (Al)GaN surfaces modified the nitride epitaxial growth kinetics. These phenomena appeared to be independent; however, the growth mechanisms indicated a common surface event, which included the formation of a monolayer thick Si-N mask (nano-mask) within the fractional coverage on the surface. The SiN nano-mask influenced the morphology of the deposited GaN surface, i.e. quantum structures, and also contributed to the termination of threading dislocations in GaN films.

元の言語英語
ページ(範囲)L831-L834
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
39
発行部数8 B
出版物ステータス出版済み - 8 15 2000
外部発表Yes

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Dislocations (crystals)
Epitaxial growth
Nitrides
epitaxy
Semiconductor quantum dots
nitrides
Surface active agents
surfactants
quantum dots
Masks
masks
Growth kinetics
Monolayers
Atoms
kinetics
atoms

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

これを引用

Anti-surfactant in III-nitride epitaxy - quantum dot formation and dislocation termination. / Tanaka, Satoru; Takeuchi, Misaichi; Aoyagi, Yoshinobu.

:: Japanese Journal of Applied Physics, Part 2: Letters, 巻 39, 番号 8 B, 15.08.2000, p. L831-L834.

研究成果: ジャーナルへの寄稿記事

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