TY - JOUR
T1 - Apparent critical behaviour of sputter-deposited magnetoelectric antiferromagnetic Cr2O3 films near Néel temperature
AU - Al-Mahdawi, M.
AU - Shiokawa, Y.
AU - Pati, S. P.
AU - Ye, S.
AU - Nozaki, T.
AU - Sahashi, M.
N1 - Publisher Copyright:
© 2017 IOP Publishing Ltd.
PY - 2017/3/13
Y1 - 2017/3/13
N2 - Chromium(III) oxide is a collinear antiferromagnet with a linear magnetoelectric effect. We are presenting the measurements of the magnetoelectric susceptibility α of a sputter-deposited 500 nm film and a bulk single-crystal substrate of Cr2O3. We investigated the magnetic phase-transition and the critical exponent β of the sublattice magnetization near Néel temperature. For the film, an exponent of 0.49(1) was found below 293 K, and changed to 1.06(4) near the Néel temperature of 298 K. For the bulk substrate, the exponent was constant at 0.324(4). We investigated the reversal probability of antiferromagnetic domains during magnetoelectric field cooling. For the sputtered films, reversal probability was zero above 298 K and stabilized only below 293 K. We attribute this behaviour to formation of grains during film growth, which gives different intergrain and intragrain exchange-coupling energies. The reversal probability dependence on the magnitude of cooling magnetic field could be explained by a phenomenological model. For the bulk substrate, reversal probability was stabilized immediately at the Néel temperature of 307.6 K.
AB - Chromium(III) oxide is a collinear antiferromagnet with a linear magnetoelectric effect. We are presenting the measurements of the magnetoelectric susceptibility α of a sputter-deposited 500 nm film and a bulk single-crystal substrate of Cr2O3. We investigated the magnetic phase-transition and the critical exponent β of the sublattice magnetization near Néel temperature. For the film, an exponent of 0.49(1) was found below 293 K, and changed to 1.06(4) near the Néel temperature of 298 K. For the bulk substrate, the exponent was constant at 0.324(4). We investigated the reversal probability of antiferromagnetic domains during magnetoelectric field cooling. For the sputtered films, reversal probability was zero above 298 K and stabilized only below 293 K. We attribute this behaviour to formation of grains during film growth, which gives different intergrain and intragrain exchange-coupling energies. The reversal probability dependence on the magnitude of cooling magnetic field could be explained by a phenomenological model. For the bulk substrate, reversal probability was stabilized immediately at the Néel temperature of 307.6 K.
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U2 - 10.1088/1361-6463/aa623e
DO - 10.1088/1361-6463/aa623e
M3 - Article
AN - SCOPUS:85016150734
SN - 0022-3727
VL - 50
JO - Journal Physics D: Applied Physics
JF - Journal Physics D: Applied Physics
IS - 15
M1 - 155004
ER -