Applicability of the three-dimensional Alexander-Haasen model for the analysis of dislocation distributions in single-crystal silicon

B. Gao, K. Jiptner, S. Nakano, H. Harada, Y. Miyamura, T. Sekiguchi, Koichi Kakimoto

研究成果: Contribution to journalArticle査読

8 被引用数 (Scopus)

抄録

Applicability of the three-dimensional Alexander-Haasen (AH) model for the analysis of dislocation distributions in single-crystal silicon has been estimated. The numerical results obtained from the AH model agree well with the experimental data for both CZ-Si and FZ-Si crystals with the axis in the [001] direction but do not completely agree with the experimental data for the FZ-Si crystal with the axis in the [111] direction. The inapplicability of the AH model in a crystal with the axis in the [111] direction may arise from the neglect of dislocation propagation in this model, because the dislocation propagation in a crystal with the axis in the [111] direction is more active than that in a crystal with the axis in the [001] direction. Therefore, to increase the applicability of the AH model, it is necessary to include the effect of dislocation propagation.

本文言語英語
ページ(範囲)49-55
ページ数7
ジャーナルJournal of Crystal Growth
411
DOI
出版ステータス出版済み - 2 1 2015

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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