Applicability of the three-dimensional Alexander-Haasen model for the analysis of dislocation distributions in single-crystal silicon

B. Gao, K. Jiptner, S. Nakano, H. Harada, Y. Miyamura, T. Sekiguchi, K. Kakimoto

研究成果: ジャーナルへの寄稿記事

6 引用 (Scopus)

抄録

Applicability of the three-dimensional Alexander-Haasen (AH) model for the analysis of dislocation distributions in single-crystal silicon has been estimated. The numerical results obtained from the AH model agree well with the experimental data for both CZ-Si and FZ-Si crystals with the axis in the [001] direction but do not completely agree with the experimental data for the FZ-Si crystal with the axis in the [111] direction. The inapplicability of the AH model in a crystal with the axis in the [111] direction may arise from the neglect of dislocation propagation in this model, because the dislocation propagation in a crystal with the axis in the [111] direction is more active than that in a crystal with the axis in the [001] direction. Therefore, to increase the applicability of the AH model, it is necessary to include the effect of dislocation propagation.

元の言語英語
ページ(範囲)49-55
ページ数7
ジャーナルJournal of Crystal Growth
411
DOI
出版物ステータス出版済み - 2 1 2015

Fingerprint

Silicon
Dislocations (crystals)
Single crystals
Crystals
single crystals
silicon
crystals
propagation
Direction compound

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

これを引用

Applicability of the three-dimensional Alexander-Haasen model for the analysis of dislocation distributions in single-crystal silicon. / Gao, B.; Jiptner, K.; Nakano, S.; Harada, H.; Miyamura, Y.; Sekiguchi, T.; Kakimoto, K.

:: Journal of Crystal Growth, 巻 411, 01.02.2015, p. 49-55.

研究成果: ジャーナルへの寄稿記事

Gao, B. ; Jiptner, K. ; Nakano, S. ; Harada, H. ; Miyamura, Y. ; Sekiguchi, T. ; Kakimoto, K. / Applicability of the three-dimensional Alexander-Haasen model for the analysis of dislocation distributions in single-crystal silicon. :: Journal of Crystal Growth. 2015 ; 巻 411. pp. 49-55.
@article{b4263f80b03b4dc984a74ba33c7cddea,
title = "Applicability of the three-dimensional Alexander-Haasen model for the analysis of dislocation distributions in single-crystal silicon",
abstract = "Applicability of the three-dimensional Alexander-Haasen (AH) model for the analysis of dislocation distributions in single-crystal silicon has been estimated. The numerical results obtained from the AH model agree well with the experimental data for both CZ-Si and FZ-Si crystals with the axis in the [001] direction but do not completely agree with the experimental data for the FZ-Si crystal with the axis in the [111] direction. The inapplicability of the AH model in a crystal with the axis in the [111] direction may arise from the neglect of dislocation propagation in this model, because the dislocation propagation in a crystal with the axis in the [111] direction is more active than that in a crystal with the axis in the [001] direction. Therefore, to increase the applicability of the AH model, it is necessary to include the effect of dislocation propagation.",
author = "B. Gao and K. Jiptner and S. Nakano and H. Harada and Y. Miyamura and T. Sekiguchi and K. Kakimoto",
year = "2015",
month = "2",
day = "1",
doi = "10.1016/j.jcrysgro.2014.11.011",
language = "English",
volume = "411",
pages = "49--55",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

TY - JOUR

T1 - Applicability of the three-dimensional Alexander-Haasen model for the analysis of dislocation distributions in single-crystal silicon

AU - Gao, B.

AU - Jiptner, K.

AU - Nakano, S.

AU - Harada, H.

AU - Miyamura, Y.

AU - Sekiguchi, T.

AU - Kakimoto, K.

PY - 2015/2/1

Y1 - 2015/2/1

N2 - Applicability of the three-dimensional Alexander-Haasen (AH) model for the analysis of dislocation distributions in single-crystal silicon has been estimated. The numerical results obtained from the AH model agree well with the experimental data for both CZ-Si and FZ-Si crystals with the axis in the [001] direction but do not completely agree with the experimental data for the FZ-Si crystal with the axis in the [111] direction. The inapplicability of the AH model in a crystal with the axis in the [111] direction may arise from the neglect of dislocation propagation in this model, because the dislocation propagation in a crystal with the axis in the [111] direction is more active than that in a crystal with the axis in the [001] direction. Therefore, to increase the applicability of the AH model, it is necessary to include the effect of dislocation propagation.

AB - Applicability of the three-dimensional Alexander-Haasen (AH) model for the analysis of dislocation distributions in single-crystal silicon has been estimated. The numerical results obtained from the AH model agree well with the experimental data for both CZ-Si and FZ-Si crystals with the axis in the [001] direction but do not completely agree with the experimental data for the FZ-Si crystal with the axis in the [111] direction. The inapplicability of the AH model in a crystal with the axis in the [111] direction may arise from the neglect of dislocation propagation in this model, because the dislocation propagation in a crystal with the axis in the [111] direction is more active than that in a crystal with the axis in the [001] direction. Therefore, to increase the applicability of the AH model, it is necessary to include the effect of dislocation propagation.

UR - http://www.scopus.com/inward/record.url?scp=84912553149&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84912553149&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2014.11.011

DO - 10.1016/j.jcrysgro.2014.11.011

M3 - Article

AN - SCOPUS:84912553149

VL - 411

SP - 49

EP - 55

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -