Application of laser-induced ghz surface acoustic waves to evaluate ion-implanted semiconductors

Hiroyuki Nishimura, Akira Harata, Tsuguo Sawada

研究成果: Contribution to journalArticle査読

4 被引用数 (Scopus)

抄録

The transient reflecting grating method has been used to characterize ion-implanted silicon layers and demonstrate its usefulness for nondestructive and remote evaluation of modified solid surfaces. The surface acoustic velocity, relaxation constant and signal intensity were measured as functions of ion dose. The results suggested that damage induced by implantation significantly affected the surface properties even under light dose conditions. The subnanosecond temporal resolution of the present method provided successful characterization of the implanted layers.

本文言語英語
ページ(範囲)91-93
ページ数3
ジャーナルJapanese Journal of Applied Physics
31
DOI
出版ステータス出版済み - 1 1992
外部発表はい

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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