Applications of nanosecond laser annealing to fabricating p-n homo junction on ZnO nanorods

T. Shimogaki, T. Ofuji, N. Tetsuyama, K. Okazaki, M. Higashihata, Daisuke Nakamura, Hiroshi Ikenoue, Tanemasa Asano, T. Okada

研究成果: 著書/レポートタイプへの貢献会議での発言

1 引用 (Scopus)

抄録

Zinc oxide (ZnO) has attracted considerable attension due to its wide applications in particular ultra violet light emitting diode (UV-LED). In addition, the one-dimensional ZnO crystals are quite attractive as building blocks for light emitting devices like laser and LED, because of their high crystallinity and light confinement properties. However, a method for the realization of the stable p-type ZnO has not been well established. In our study, we have investigated the effect of the nanosecond laser irradiation to the ZnO nanorods as an ultrafast melting and recrystallizing process for realization of the p-type ZnO. Fabrication of the p-n homo junction along ZnO nanorods has been demonstrated using phosphorus ion implantation and ns-laser annealing by a KrF excimer laser. Rectifying I-V characteristics attributed to p-n junction were observed from the measurement of electrical properties. In addition, the penetration depth of laser annealed layer was measured by observing cathode luminescence images. Then, it was turned out that high repetition rate laser annealing can anneal ZnO nanorods over the optical-absorption length. In this report, optical, structural, and electrical characteristics of the phosphorus ion-implanted ZnO nanorods annealed by the KrF excimer laser are discussed.

元の言語英語
ホスト出版物のタイトルOxide-Based Materials and Devices IV
8626
DOI
出版物ステータス出版済み - 2013
イベントOxide-Based Materials and Devices IV - San Francisco, CA, 米国
継続期間: 2 3 20132 6 2013

その他

その他Oxide-Based Materials and Devices IV
米国
San Francisco, CA
期間2/3/132/6/13

Fingerprint

Zinc Oxide
Nanorods
laser annealing
Zinc oxide
p-n junctions
Annealing
zinc oxides
nanorods
Laser
Lasers
Excimer Laser
Phosphorus
Excimer lasers
excimer lasers
Light emitting diodes
phosphorus
light emitting diodes
lasers
Ion Implantation
Optical Absorption

All Science Journal Classification (ASJC) codes

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

これを引用

Shimogaki, T., Ofuji, T., Tetsuyama, N., Okazaki, K., Higashihata, M., Nakamura, D., ... Okada, T. (2013). Applications of nanosecond laser annealing to fabricating p-n homo junction on ZnO nanorods. : Oxide-Based Materials and Devices IV (巻 8626). [86260V] https://doi.org/10.1117/12.2003856

Applications of nanosecond laser annealing to fabricating p-n homo junction on ZnO nanorods. / Shimogaki, T.; Ofuji, T.; Tetsuyama, N.; Okazaki, K.; Higashihata, M.; Nakamura, Daisuke; Ikenoue, Hiroshi; Asano, Tanemasa; Okada, T.

Oxide-Based Materials and Devices IV. 巻 8626 2013. 86260V.

研究成果: 著書/レポートタイプへの貢献会議での発言

Shimogaki, T, Ofuji, T, Tetsuyama, N, Okazaki, K, Higashihata, M, Nakamura, D, Ikenoue, H, Asano, T & Okada, T 2013, Applications of nanosecond laser annealing to fabricating p-n homo junction on ZnO nanorods. : Oxide-Based Materials and Devices IV. 巻. 8626, 86260V, Oxide-Based Materials and Devices IV, San Francisco, CA, 米国, 2/3/13. https://doi.org/10.1117/12.2003856
Shimogaki T, Ofuji T, Tetsuyama N, Okazaki K, Higashihata M, Nakamura D その他. Applications of nanosecond laser annealing to fabricating p-n homo junction on ZnO nanorods. : Oxide-Based Materials and Devices IV. 巻 8626. 2013. 86260V https://doi.org/10.1117/12.2003856
Shimogaki, T. ; Ofuji, T. ; Tetsuyama, N. ; Okazaki, K. ; Higashihata, M. ; Nakamura, Daisuke ; Ikenoue, Hiroshi ; Asano, Tanemasa ; Okada, T. / Applications of nanosecond laser annealing to fabricating p-n homo junction on ZnO nanorods. Oxide-Based Materials and Devices IV. 巻 8626 2013.
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AU - Higashihata, M.

AU - Nakamura, Daisuke

AU - Ikenoue, Hiroshi

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