Applications of nanosecond laser annealing to fabricating p-n homo junction on ZnO nanorods

T. Shimogaki, T. Ofuji, N. Tetsuyama, K. Okazaki, M. Higashihata, D. Nakamura, H. Ikenoue, T. Asano, T. Okada

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

1 被引用数 (Scopus)


Zinc oxide (ZnO) has attracted considerable attension due to its wide applications in particular ultra violet light emitting diode (UV-LED). In addition, the one-dimensional ZnO crystals are quite attractive as building blocks for light emitting devices like laser and LED, because of their high crystallinity and light confinement properties. However, a method for the realization of the stable p-type ZnO has not been well established. In our study, we have investigated the effect of the nanosecond laser irradiation to the ZnO nanorods as an ultrafast melting and recrystallizing process for realization of the p-type ZnO. Fabrication of the p-n homo junction along ZnO nanorods has been demonstrated using phosphorus ion implantation and ns-laser annealing by a KrF excimer laser. Rectifying I-V characteristics attributed to p-n junction were observed from the measurement of electrical properties. In addition, the penetration depth of laser annealed layer was measured by observing cathode luminescence images. Then, it was turned out that high repetition rate laser annealing can anneal ZnO nanorods over the optical-absorption length. In this report, optical, structural, and electrical characteristics of the phosphorus ion-implanted ZnO nanorods annealed by the KrF excimer laser are discussed.

ホスト出版物のタイトルOxide-Based Materials and Devices IV
出版ステータス出版済み - 5月 30 2013
イベントOxide-Based Materials and Devices IV - San Francisco, CA, 米国
継続期間: 2月 3 20132月 6 2013


名前Proceedings of SPIE - The International Society for Optical Engineering


その他Oxide-Based Materials and Devices IV
CitySan Francisco, CA

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学


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