Approach to high efficient CMP for power device substrates

Syuhei Kurokawa, T. K. Doi, C. Wang, Y. Sano, H. Aida, K. Oyama, K. Takahashi

研究成果: ジャーナルへの寄稿記事

5 引用 (Scopus)

抄録

Power devices play an important role in energy saving and material substrates for power devices such as sapphire, silicon carbide (SiC), gallium nitride (GaN), and diamond are attracting extensive concern. However, because of the high hardness and stable chemical properties of power device substrates, processing is very difficult. Approach to the high-efficiency and high-quality CMP of SiC wafer and a diamond substrate is presented. The experimental results show that MnO2 slurry with strong oxidizer has a great impact on improving the SiC-CMP removal rate. Moreover, a diamond substrate, which is regarded as an ultimate power device substrate, must be also polished efficiently. In our project of efficient diamond planarization process, the surface of a diamond substrate is irradiated by femtosecond (fs) laser to enhance the polishing efficiency. The cross-section image by TEM observation shows that the formation of amorphous site was successfully induced.

元の言語英語
ページ(範囲)641-646
ページ数6
ジャーナルECS Transactions
60
発行部数1
DOI
出版物ステータス出版済み - 1 1 2014

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Diamonds
Substrates
Silicon carbide
Gallium nitride
Ultrashort pulses
Polishing
Sapphire
Chemical properties
Energy conservation
Hardness
Transmission electron microscopy
Processing

All Science Journal Classification (ASJC) codes

  • Engineering(all)

これを引用

Kurokawa, S., Doi, T. K., Wang, C., Sano, Y., Aida, H., Oyama, K., & Takahashi, K. (2014). Approach to high efficient CMP for power device substrates. ECS Transactions, 60(1), 641-646. https://doi.org/10.1149/06001.0641ecst

Approach to high efficient CMP for power device substrates. / Kurokawa, Syuhei; Doi, T. K.; Wang, C.; Sano, Y.; Aida, H.; Oyama, K.; Takahashi, K.

:: ECS Transactions, 巻 60, 番号 1, 01.01.2014, p. 641-646.

研究成果: ジャーナルへの寄稿記事

Kurokawa, S, Doi, TK, Wang, C, Sano, Y, Aida, H, Oyama, K & Takahashi, K 2014, 'Approach to high efficient CMP for power device substrates', ECS Transactions, 巻. 60, 番号 1, pp. 641-646. https://doi.org/10.1149/06001.0641ecst
Kurokawa, Syuhei ; Doi, T. K. ; Wang, C. ; Sano, Y. ; Aida, H. ; Oyama, K. ; Takahashi, K. / Approach to high efficient CMP for power device substrates. :: ECS Transactions. 2014 ; 巻 60, 番号 1. pp. 641-646.
@article{cca2dde37ea1414f8f863a4844eee436,
title = "Approach to high efficient CMP for power device substrates",
abstract = "Power devices play an important role in energy saving and material substrates for power devices such as sapphire, silicon carbide (SiC), gallium nitride (GaN), and diamond are attracting extensive concern. However, because of the high hardness and stable chemical properties of power device substrates, processing is very difficult. Approach to the high-efficiency and high-quality CMP of SiC wafer and a diamond substrate is presented. The experimental results show that MnO2 slurry with strong oxidizer has a great impact on improving the SiC-CMP removal rate. Moreover, a diamond substrate, which is regarded as an ultimate power device substrate, must be also polished efficiently. In our project of efficient diamond planarization process, the surface of a diamond substrate is irradiated by femtosecond (fs) laser to enhance the polishing efficiency. The cross-section image by TEM observation shows that the formation of amorphous site was successfully induced.",
author = "Syuhei Kurokawa and Doi, {T. K.} and C. Wang and Y. Sano and H. Aida and K. Oyama and K. Takahashi",
year = "2014",
month = "1",
day = "1",
doi = "10.1149/06001.0641ecst",
language = "English",
volume = "60",
pages = "641--646",
journal = "ECS Transactions",
issn = "1938-5862",
publisher = "Electrochemical Society, Inc.",
number = "1",

}

TY - JOUR

T1 - Approach to high efficient CMP for power device substrates

AU - Kurokawa, Syuhei

AU - Doi, T. K.

AU - Wang, C.

AU - Sano, Y.

AU - Aida, H.

AU - Oyama, K.

AU - Takahashi, K.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Power devices play an important role in energy saving and material substrates for power devices such as sapphire, silicon carbide (SiC), gallium nitride (GaN), and diamond are attracting extensive concern. However, because of the high hardness and stable chemical properties of power device substrates, processing is very difficult. Approach to the high-efficiency and high-quality CMP of SiC wafer and a diamond substrate is presented. The experimental results show that MnO2 slurry with strong oxidizer has a great impact on improving the SiC-CMP removal rate. Moreover, a diamond substrate, which is regarded as an ultimate power device substrate, must be also polished efficiently. In our project of efficient diamond planarization process, the surface of a diamond substrate is irradiated by femtosecond (fs) laser to enhance the polishing efficiency. The cross-section image by TEM observation shows that the formation of amorphous site was successfully induced.

AB - Power devices play an important role in energy saving and material substrates for power devices such as sapphire, silicon carbide (SiC), gallium nitride (GaN), and diamond are attracting extensive concern. However, because of the high hardness and stable chemical properties of power device substrates, processing is very difficult. Approach to the high-efficiency and high-quality CMP of SiC wafer and a diamond substrate is presented. The experimental results show that MnO2 slurry with strong oxidizer has a great impact on improving the SiC-CMP removal rate. Moreover, a diamond substrate, which is regarded as an ultimate power device substrate, must be also polished efficiently. In our project of efficient diamond planarization process, the surface of a diamond substrate is irradiated by femtosecond (fs) laser to enhance the polishing efficiency. The cross-section image by TEM observation shows that the formation of amorphous site was successfully induced.

UR - http://www.scopus.com/inward/record.url?scp=84904992704&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84904992704&partnerID=8YFLogxK

U2 - 10.1149/06001.0641ecst

DO - 10.1149/06001.0641ecst

M3 - Article

VL - 60

SP - 641

EP - 646

JO - ECS Transactions

JF - ECS Transactions

SN - 1938-5862

IS - 1

ER -