抄録
Doped lanthanum gallate (La1-xSrx)(Ga 1-y-zMgyCoz)O3-(x+y+z)/2 (LSGMCO) perovskite oxide films were deposited on a quartz glass, LaAlO3 single-crystal substrate and porous anode electrode of a solid oxide fuel cell (SOFC) by pulsed laser deposition. It was necessary to increase the substrate temperature up to 800°C for a crystallization of the LSGMCO films. The film deposited on the LaAlO3 single-crystal substrate grew along the e-axis. The as-deposited LSGMCO thick film fabricated on the porous substrate at 800°C and at an oxygen pressure of 20Pa was formed from polycrystal columns and showed a high conductivity of 0.75/cm at a measurement temperature of 800°C. The activation energies were 0.72 eV at 600-800°C and 1.05eVat400-600°C.
本文言語 | 英語 |
---|---|
ページ(範囲) | 299-302 |
ページ数 | 4 |
ジャーナル | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
巻 | 43 |
号 | 1 |
DOI | |
出版ステータス | 出版済み - 1月 2004 |
外部発表 | はい |
!!!All Science Journal Classification (ASJC) codes
- 工学(全般)
- 物理学および天文学(全般)