Atom-migration effect during crystallization of a-SiGe films by SR soft x-ray irradiation

Shota Kino, Yuki Nonomura, Akira Heya, Naoto Matsuo, Kazuhiro Kanda, Shuji Miyamoto, Sho Amano, Takayasu Mochizuki, Kaoru Toko, Taizoh Sadoh, Masanobu Miyao

研究成果: 著書/レポートタイプへの貢献会議での発言

2 引用 (Scopus)

抜粋

We investigated a low-temperature crystallization of a- Si, a-Ge and a-Si1-xGex films by the synchrotron radiation (SR) soft X-ray irradiation at storage ring current of 25-220 mA. Crystallization of SiGe caused by the atomic migration during soft X-ray irradiation is effective as compared with the thermal annealing.

元の言語英語
ホスト出版物のタイトルSociety for Information Display - 18th International Display Workshops 2011, IDW'11
ページ659-662
ページ数4
1
出版物ステータス出版済み - 2011
イベント18th International Display Workshops 2011, IDW 2011 - Nagoya, 日本
継続期間: 12 7 201112 9 2011

その他

その他18th International Display Workshops 2011, IDW 2011
日本
Nagoya
期間12/7/1112/9/11

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

これを引用

Kino, S., Nonomura, Y., Heya, A., Matsuo, N., Kanda, K., Miyamoto, S., ... Miyao, M. (2011). Atom-migration effect during crystallization of a-SiGe films by SR soft x-ray irradiation. : Society for Information Display - 18th International Display Workshops 2011, IDW'11 (巻 1, pp. 659-662)