Atom-probe study of the initial stage of silicide formation

Osamu Nishikawa, Yoshitaka Tsunashima, Eiichi Nomura, Minoru Wada, Shiro Horie, Mezame Shibata, Toshihiko Yoshimura, Ryuji Uemori

研究成果: ジャーナルへの寄稿記事

8 引用 (Scopus)

抄録

The initial stage of silicide formation was investigated utilizing the high mass resolution atom probe. Silicon-deposited Ni and W specimen tips were heated to various temperatures in a vacuum of 10-7 Pa. A highly ordered image, which agreed well with the computer-simulated image of WSi2 with the C11b structure, was observed after heating the tip to 950 K. Ni formed a mixed layer with Si even at 80 K. The depth profile of the silicide composition changed with temperature due to a high diffusibility of Ni. The silicide formed above 900 K consistently showed a well-ordered image corresponding to a cubic structure, while its composition varied from Ni3Si2 to NiSi with depth. The computer-simulated image suggests that the observed ordered structure could be a modified Cl structure. The evaporation field of the ordered silicide was found to be significantly higher than those of pure Ni and Si, possibly due to a strong binding between the constituent atoms.

元の言語英語
ページ(範囲)529-533
ページ数5
ジャーナルSurface Science
126
発行部数1-3
DOI
出版物ステータス出版済み - 3 2 1983
外部発表Yes

Fingerprint

Atoms
probes
Silicon
Chemical analysis
atoms
Evaporation
Vacuum
Heating
Temperature
evaporation
vacuum
heating
temperature
silicon
profiles

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

これを引用

Nishikawa, O., Tsunashima, Y., Nomura, E., Wada, M., Horie, S., Shibata, M., ... Uemori, R. (1983). Atom-probe study of the initial stage of silicide formation. Surface Science, 126(1-3), 529-533. https://doi.org/10.1016/0039-6028(83)90753-7

Atom-probe study of the initial stage of silicide formation. / Nishikawa, Osamu; Tsunashima, Yoshitaka; Nomura, Eiichi; Wada, Minoru; Horie, Shiro; Shibata, Mezame; Yoshimura, Toshihiko; Uemori, Ryuji.

:: Surface Science, 巻 126, 番号 1-3, 02.03.1983, p. 529-533.

研究成果: ジャーナルへの寄稿記事

Nishikawa, O, Tsunashima, Y, Nomura, E, Wada, M, Horie, S, Shibata, M, Yoshimura, T & Uemori, R 1983, 'Atom-probe study of the initial stage of silicide formation', Surface Science, 巻. 126, 番号 1-3, pp. 529-533. https://doi.org/10.1016/0039-6028(83)90753-7
Nishikawa O, Tsunashima Y, Nomura E, Wada M, Horie S, Shibata M その他. Atom-probe study of the initial stage of silicide formation. Surface Science. 1983 3 2;126(1-3):529-533. https://doi.org/10.1016/0039-6028(83)90753-7
Nishikawa, Osamu ; Tsunashima, Yoshitaka ; Nomura, Eiichi ; Wada, Minoru ; Horie, Shiro ; Shibata, Mezame ; Yoshimura, Toshihiko ; Uemori, Ryuji. / Atom-probe study of the initial stage of silicide formation. :: Surface Science. 1983 ; 巻 126, 番号 1-3. pp. 529-533.
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