Atomic layer deposition of aluminum (111) thin film by dimethylethylaminealane precursor

Sameh Okasha, Yoshiaki Sekine, Satoshi Sasaki, Yuichi Harada

研究成果: Contribution to journalArticle査読

抄録

We report the growth of aluminum (111) thin film by atomic layer deposition (ALD) technique with dimethylethylaminealane (DMEAA) as a precursor. It is found that the metallic underlayer is essential to grow uniform aluminum films by DMEAA precursor. As a titanium thin film is used as the underlayer, grown aluminum thin film shows (111) orientation irrespective of substrates. The lattice constant and superconducting transition temperature of the aluminum thin films are the same as the bulk one. These findings suggest that ALD technique provides high quality of the aluminum thin films and have potential for the applications of superconducting devices. We discuss ALD technique with DMEAA precursor is the promising method for fabricating vertical small Josephson tunnel junctions, which can be used as the superconducting quantum bits.

本文言語英語
論文番号138784
ジャーナルThin Solid Films
732
DOI
出版ステータス出版済み - 8 31 2021

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

フィンガープリント

「Atomic layer deposition of aluminum (111) thin film by dimethylethylaminealane precursor」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル