Atomic-layer-resolved bandgap structure of an ultrathin oxynitride-silicon film epitaxially grown on 6H-SiC (0001)

T. Shirasawa, K. Hayashi, H. Yoshida, Seigi Mizuno, Tanaka Satoru, T. Muro, Y. Tamenori, Y. Harada, T. Tokushima, Y. Horikawa, E. Kobayashi, T. Kinoshita, S. Shin, T. Takahashi, Y. Ando, K. Akagi, S. Tsuneyuki, H. Tochihara

研究成果: ジャーナルへの寄稿記事

16 引用 (Scopus)

抄録

Electronic structures of a silicon-oxynitride (SiON) layer (∼0.6 nm in thickness) epitaxially grown on 6H-SiC (0001) were investigated on atomic-layer scale using soft x-ray absorption spectroscopy and x-ray emission spectroscopy (XAS and XES) and first-principles calculations. The SiON layer has a hetero-double-layered structure: an interfacial silicon nitride layer and a silicon oxide overlayer. The element-specific XAS and XES measurements revealed layer-resolved energy-band profiles. Measured gap sizes are 6.3±0.6 eV at the nitride layer and 8.3±0.8 eV at the oxide layer. The nitride and oxide layers have almost the same energy of conduction-band minimum (CBM) being ∼3 eV higher than CBM of the SiC substrate. The energy-band profiles of the SiON layer are qualitatively reproduced by the calculations. The calculations show that broadening of bandgap of the substrate occurs only at an interfacial SiC bilayer.

元の言語英語
記事番号241301
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
79
発行部数24
DOI
出版物ステータス出版済み - 6 1 2009

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oxynitrides
Silicon
silicon films
Energy gap
X rays
Emission spectroscopy
Conduction bands
Absorption spectroscopy
Nitrides
Band structure
Oxides
Silicon oxides
Substrates
Silicon nitride
Electronic structure
x ray absorption
x ray spectroscopy
nitrides
energy bands
absorption spectroscopy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

これを引用

Atomic-layer-resolved bandgap structure of an ultrathin oxynitride-silicon film epitaxially grown on 6H-SiC (0001). / Shirasawa, T.; Hayashi, K.; Yoshida, H.; Mizuno, Seigi; Satoru, Tanaka; Muro, T.; Tamenori, Y.; Harada, Y.; Tokushima, T.; Horikawa, Y.; Kobayashi, E.; Kinoshita, T.; Shin, S.; Takahashi, T.; Ando, Y.; Akagi, K.; Tsuneyuki, S.; Tochihara, H.

:: Physical Review B - Condensed Matter and Materials Physics, 巻 79, 番号 24, 241301, 01.06.2009.

研究成果: ジャーナルへの寄稿記事

Shirasawa, T, Hayashi, K, Yoshida, H, Mizuno, S, Satoru, T, Muro, T, Tamenori, Y, Harada, Y, Tokushima, T, Horikawa, Y, Kobayashi, E, Kinoshita, T, Shin, S, Takahashi, T, Ando, Y, Akagi, K, Tsuneyuki, S & Tochihara, H 2009, 'Atomic-layer-resolved bandgap structure of an ultrathin oxynitride-silicon film epitaxially grown on 6H-SiC (0001)', Physical Review B - Condensed Matter and Materials Physics, 巻. 79, 番号 24, 241301. https://doi.org/10.1103/PhysRevB.79.241301
Shirasawa, T. ; Hayashi, K. ; Yoshida, H. ; Mizuno, Seigi ; Satoru, Tanaka ; Muro, T. ; Tamenori, Y. ; Harada, Y. ; Tokushima, T. ; Horikawa, Y. ; Kobayashi, E. ; Kinoshita, T. ; Shin, S. ; Takahashi, T. ; Ando, Y. ; Akagi, K. ; Tsuneyuki, S. ; Tochihara, H. / Atomic-layer-resolved bandgap structure of an ultrathin oxynitride-silicon film epitaxially grown on 6H-SiC (0001). :: Physical Review B - Condensed Matter and Materials Physics. 2009 ; 巻 79, 番号 24.
@article{2814aff4544f46948d3ee3c0c240dd87,
title = "Atomic-layer-resolved bandgap structure of an ultrathin oxynitride-silicon film epitaxially grown on 6H-SiC (0001)",
abstract = "Electronic structures of a silicon-oxynitride (SiON) layer (∼0.6 nm in thickness) epitaxially grown on 6H-SiC (0001) were investigated on atomic-layer scale using soft x-ray absorption spectroscopy and x-ray emission spectroscopy (XAS and XES) and first-principles calculations. The SiON layer has a hetero-double-layered structure: an interfacial silicon nitride layer and a silicon oxide overlayer. The element-specific XAS and XES measurements revealed layer-resolved energy-band profiles. Measured gap sizes are 6.3±0.6 eV at the nitride layer and 8.3±0.8 eV at the oxide layer. The nitride and oxide layers have almost the same energy of conduction-band minimum (CBM) being ∼3 eV higher than CBM of the SiC substrate. The energy-band profiles of the SiON layer are qualitatively reproduced by the calculations. The calculations show that broadening of bandgap of the substrate occurs only at an interfacial SiC bilayer.",
author = "T. Shirasawa and K. Hayashi and H. Yoshida and Seigi Mizuno and Tanaka Satoru and T. Muro and Y. Tamenori and Y. Harada and T. Tokushima and Y. Horikawa and E. Kobayashi and T. Kinoshita and S. Shin and T. Takahashi and Y. Ando and K. Akagi and S. Tsuneyuki and H. Tochihara",
year = "2009",
month = "6",
day = "1",
doi = "10.1103/PhysRevB.79.241301",
language = "English",
volume = "79",
journal = "Physical Review B - Condensed Matter and Materials Physics",
issn = "1098-0121",
publisher = "American Physical Society",
number = "24",

}

TY - JOUR

T1 - Atomic-layer-resolved bandgap structure of an ultrathin oxynitride-silicon film epitaxially grown on 6H-SiC (0001)

AU - Shirasawa, T.

AU - Hayashi, K.

AU - Yoshida, H.

AU - Mizuno, Seigi

AU - Satoru, Tanaka

AU - Muro, T.

AU - Tamenori, Y.

AU - Harada, Y.

AU - Tokushima, T.

AU - Horikawa, Y.

AU - Kobayashi, E.

AU - Kinoshita, T.

AU - Shin, S.

AU - Takahashi, T.

AU - Ando, Y.

AU - Akagi, K.

AU - Tsuneyuki, S.

AU - Tochihara, H.

PY - 2009/6/1

Y1 - 2009/6/1

N2 - Electronic structures of a silicon-oxynitride (SiON) layer (∼0.6 nm in thickness) epitaxially grown on 6H-SiC (0001) were investigated on atomic-layer scale using soft x-ray absorption spectroscopy and x-ray emission spectroscopy (XAS and XES) and first-principles calculations. The SiON layer has a hetero-double-layered structure: an interfacial silicon nitride layer and a silicon oxide overlayer. The element-specific XAS and XES measurements revealed layer-resolved energy-band profiles. Measured gap sizes are 6.3±0.6 eV at the nitride layer and 8.3±0.8 eV at the oxide layer. The nitride and oxide layers have almost the same energy of conduction-band minimum (CBM) being ∼3 eV higher than CBM of the SiC substrate. The energy-band profiles of the SiON layer are qualitatively reproduced by the calculations. The calculations show that broadening of bandgap of the substrate occurs only at an interfacial SiC bilayer.

AB - Electronic structures of a silicon-oxynitride (SiON) layer (∼0.6 nm in thickness) epitaxially grown on 6H-SiC (0001) were investigated on atomic-layer scale using soft x-ray absorption spectroscopy and x-ray emission spectroscopy (XAS and XES) and first-principles calculations. The SiON layer has a hetero-double-layered structure: an interfacial silicon nitride layer and a silicon oxide overlayer. The element-specific XAS and XES measurements revealed layer-resolved energy-band profiles. Measured gap sizes are 6.3±0.6 eV at the nitride layer and 8.3±0.8 eV at the oxide layer. The nitride and oxide layers have almost the same energy of conduction-band minimum (CBM) being ∼3 eV higher than CBM of the SiC substrate. The energy-band profiles of the SiON layer are qualitatively reproduced by the calculations. The calculations show that broadening of bandgap of the substrate occurs only at an interfacial SiC bilayer.

UR - http://www.scopus.com/inward/record.url?scp=67649946029&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67649946029&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.79.241301

DO - 10.1103/PhysRevB.79.241301

M3 - Article

VL - 79

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

SN - 1098-0121

IS - 24

M1 - 241301

ER -