Atomic structure of AlN/Al2O3 interfaces fabricated by pulsed-laser deposition

Y. Tokumoto, Y. Sato, T. Yamamoto, N. Shibata, Y. Ikuhara

研究成果: Contribution to journalArticle査読

10 被引用数 (Scopus)

抄録

The atomic structure of AlN/Al2O3 interface fabricated by pulsed laser deposition is characterized by high-resolution transmission electron microscopy (HRTEM) combined with systematic multi-slice HRTEM image simulations. It is found that the AlN film deposited on a (0001) Al2O3 substrate grows epitaxially with the orientation relationship of (0001)AlN//(0001) Al2O3 and [1100 ]AlN//[11 20 ]Al2O3, with an atomically sharp interface. The observed interface showed best correspondence with the rigid structural model that AlN is terminated by Al at the interface, while the Al 2O3 substrate is terminated by O. Detailed structural analysis indicates that Al sites at the interface are coordinated by both oxygen and nitrogen in this model, with similar coordination environment in AlN. This favored coordination state at the interface may stabilize the AlN/Al 2O3 interface.

本文言語英語
ページ(範囲)2553-2557
ページ数5
ジャーナルJournal of Materials Science
41
9
DOI
出版ステータス出版済み - 5 2006
外部発表はい

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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