Atomically-controlled Fe3Si/Ge hybrid structures for group-IV-semiconductor spin-transistor application

Masanobu Miyao, Yuichiro Ando, Koji Ueda, Kohei Hamaya, Yukio Nozaki, Taizoh Sadoh, Kimihide Matsuyama, Kazumasa Narumi, Yoshihito Maeda

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

抄録

Recent our progress in low temperature molecular beam epitaxy of magnetic silicide (Fe3Si) on group-IV-semiconductor (Ge) was reviewed. By optimizing beam flux ratio (Fe:Si=3:l) and growth temperature (130 °C), a high quality hybrid structure, i.e., DO3-type Fe3Si on Ge with an atomically flat interface, was achieved. Excellent magnetic properties with a small coercivity (0.8 Oe) and electrical properties with Schottky barrier height of 0.56 eV were obtained. The ratio of the on-current to the off-current of Schottky diode was the order of 104. These results will be a powerful tool to open up group-IV-semiconductor spin-transistors, consisting of Ge channel with high mobility and Fe3Si source/drain for spin-injection.

本文言語英語
ホスト出版物のタイトルICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
ページ688-691
ページ数4
DOI
出版ステータス出版済み - 12月 1 2008
イベント2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, 中国
継続期間: 10月 20 200810月 23 2008

その他

その他2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
国/地域中国
CityBeijing
Period10/20/0810/23/08

!!!All Science Journal Classification (ASJC) codes

  • 電子工学および電気工学
  • 凝縮系物理学
  • 電子材料、光学材料、および磁性材料

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