Atomically controlled molecular beam epitaxy of ferromagnetic silicide Fe3Si on Ge

T. Sadoh, M. Kumano, R. Kizuka, K. Ueda, A. Kenjo, M. Miyao

研究成果: Contribution to journalArticle査読

56 被引用数 (Scopus)

抄録

Low-temperature (60 °C) molecular beam epitaxy (MBE) of Fe3 Si layers on Ge substrates was investigated. From x-ray diffraction and transmission electron microscopy measurements, it was shown that Fe3 Si layers including the DO3 type were epitaxially grown on Ge(110) and Ge(111), while polycrystal Fe3 Si was formed on Ge(100). Although the Fe3 SiGe (110) interface was slightly rough (∼1 nm), the Fe3 SiGe (111) interface was atomically flat. Such atomically controlled MBE of Fe3 Si on the Ge(111) substrate can be employed to realize Ge channel spin transistors, which can be integrated with Si large-scale integrated circuits.

本文言語英語
論文番号182511
ジャーナルApplied Physics Letters
89
18
DOI
出版ステータス出版済み - 2006

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

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