Au-catalyst induced low temperature (∼250 °C) layer exchange crystallization for SiGe on insulator

Jong Hyeok Park, Masashi Kurosawa, Naoyuki Kawabata, Masanobu Miyao, Taizoh Sadoh

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

3 被引用数 (Scopus)

抄録

The gold-induced crystallization technique has been investigated to achieve poly-SiGe films on insulators at low temperatures (≤ 300°C). By annealing of the amorphous SiGe (Ge concentration: 0-100%)/Au stacked structures formed on insulating substrates, positions of the SiGe and Au layers are inverted, and the Au/SiGe stacked structures are obtained. Crystallization of the SiGe layers in the inverted samples is confirmed by the Raman scattering spectroscopy analysis. Moreover, the Raman measurements reveal that the Ge fractions in the crystallized SiGe layers are almost the same as those of the initial amorphous SiGe layers. This gold-induced layer-exchange crystallization technique of SiGe layers at a low temperature (∼250°C) will be very useful to obtain poly-SiGe layers on plastic substrates, which are essential to realize flexible high-speed thin-films transistors and high-efficiency solar cells.

本文言語英語
ホスト出版物のタイトルAdvanced Semiconductor-on-Insulator Technology and Related Physics 15
ページ39-42
ページ数4
5
DOI
出版ステータス出版済み - 8 2 2011
イベント15th International Symposium on Advanced Semiconductor-on-Insulator Technology and Related Physics - 219th ECS Meeting - Montreal, QC, カナダ
継続期間: 5 1 20115 6 2011

出版物シリーズ

名前ECS Transactions
番号5
35
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

その他

その他15th International Symposium on Advanced Semiconductor-on-Insulator Technology and Related Physics - 219th ECS Meeting
Countryカナダ
CityMontreal, QC
Period5/1/115/6/11

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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