抄録
The effect of precursor vapor pressure on LiNbO3 and LiTaO3 film stoichiometry is compared for single and double alkoxides. Stoichiometric evaporation can be achieved in an appropriate temperature and pressure range according to the precursor sublimate composition analysis. The deposited LiTaO3 films from LiTa(1-OC4H9)6 were Stoichiometric and epitaxial when a lattice-matched single-crystal substrate was used. The stoichiometry of the film was assessed by Rutherford backscattering and precision lattice parameter measurements. The high quality of the epitaxial layer was confirmed by high-resolution double-and triple-axes X-ray diffraction.
本文言語 | 英語 |
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ページ(範囲) | 217-226 |
ページ数 | 10 |
ジャーナル | Journal of Crystal Growth |
巻 | 183 |
号 | 1-2 |
DOI | |
出版ステータス | 出版済み - 1月 1998 |
外部発表 | はい |
!!!All Science Journal Classification (ASJC) codes
- 凝縮系物理学
- 無機化学
- 材料化学