Autostoichiometric vapor deposition III. A study of stoichiometry and characterization of epitaxial LiTaO3 layer

K. W. Chour, R. C. Zhang, M. S. Goorsky, T. Takada, E. Akiba, T. Kumagai, K. Kawaguchi, M. L. Jensen, C. Eaves, R. Xu

研究成果: Contribution to journalArticle査読

5 被引用数 (Scopus)

抄録

The effect of precursor vapor pressure on LiNbO3 and LiTaO3 film stoichiometry is compared for single and double alkoxides. Stoichiometric evaporation can be achieved in an appropriate temperature and pressure range according to the precursor sublimate composition analysis. The deposited LiTaO3 films from LiTa(1-OC4H9)6 were Stoichiometric and epitaxial when a lattice-matched single-crystal substrate was used. The stoichiometry of the film was assessed by Rutherford backscattering and precision lattice parameter measurements. The high quality of the epitaxial layer was confirmed by high-resolution double-and triple-axes X-ray diffraction.

本文言語英語
ページ(範囲)217-226
ページ数10
ジャーナルJournal of Crystal Growth
183
1-2
DOI
出版ステータス出版済み - 1 1998
外部発表はい

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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