Band gap tuning in InxGa1-xN/InyGa1-yN short period superlattices

I. Gorczyca, G. Staszczak, G. Targowski, E. Grzanka, J. Smalc-Koziorowska, T. Suski, T. Kawamura, Y. Kangawa

研究成果: Contribution to journalArticle査読

抄録

To overcome the technological problem of the low In incorporation in InGaN based heterostructures we consider superlattices of the type: InxGa1-xN/InyGa1-yN (x > y). It is shown that the structures of the proposed type allow for a more precise tuning of the emission energy and shift of the light emission to lower energies by about 400 meV (50–60 nm) compared to the conventional InxGa1-xN/GaN SLs with the same concentration x. The above conclusions were drawn on the basis of comparing the calculated ab-initio band gaps with the photoluminescence emission energies obtained from the measurements performed on the specially designed samples grown by metal-organic vapor phase epitaxy.

本文言語英語
論文番号106907
ジャーナルSuperlattices and Microstructures
155
DOI
出版ステータス出版済み - 7 2021

All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 電子工学および電気工学

フィンガープリント

「Band gap tuning in In<sub>x</sub>Ga<sub>1-x</sub>N/In<sub>y</sub>Ga<sub>1-y</sub>N short period superlattices」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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