To overcome the technological problem of the low In incorporation in InGaN based heterostructures we consider superlattices of the type: InxGa1-xN/InyGa1-yN (x > y). It is shown that the structures of the proposed type allow for a more precise tuning of the emission energy and shift of the light emission to lower energies by about 400 meV (50–60 nm) compared to the conventional InxGa1-xN/GaN SLs with the same concentration x. The above conclusions were drawn on the basis of comparing the calculated ab-initio band gaps with the photoluminescence emission energies obtained from the measurements performed on the specially designed samples grown by metal-organic vapor phase epitaxy.
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