Band transitions in wurtzite GaN and InN determined by valence electron energy loss spectroscopy

P. Specht, J. C. Ho, X. Xu, R. Armitage, E. R. Weber, R. Erni, C. Kisielowski

研究成果: Contribution to journalArticle査読

47 被引用数 (Scopus)

抄録

Valence electron energy loss spectroscopy (VEELS) was applied to determine band transitions in wurtzite InN, deposited by molecular beam epitaxy on (0001) sapphire substrates or GaN buffer layers. The GaN buffer layer was used as VEELS reference. At room temperature a band transition for wurtzite InN was found at (1.7±0.2 eV) and for wurtzite GaN at (3.3±0.2 eV) that are ascribed to the fundamental bandgap. Additional band transitions could be identified at higher and lower energy losses. The latter may be related to transitions involving defect bands. In InN, neither oxygen related crystal phases nor indium metal clusters were observed in the areas of the epilayers investigated by VEELS. Consequently, the obtained results mainly describe the properties of the InN host crystal.

本文言語英語
ページ(範囲)340-344
ページ数5
ジャーナルSolid State Communications
135
5
DOI
出版ステータス出版済み - 8 2005
外部発表はい

All Science Journal Classification (ASJC) codes

  • 化学 (全般)
  • 凝縮系物理学
  • 材料化学

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