Beam-bunching in an ECR ion source by the pulsed gating-potential method

S. C. Jeong, M. Oyaizu, H. Kawakami, Y. Shirakabe, Nobuo Ikeda, T. Nomura

研究成果: ジャーナルへの寄稿記事

8 引用 (Scopus)

抄録

A pulsed gating-potential method for millisecond beam-bunching has successfully been applied for the first time to a single-stage 6.4 GHz ECR ion source. Clear bunching effects were observed when a pulsed alternating potential of a few hundred volts was applied between the ECR chamber of the source and an electrode placed near its exit hole. The bunched current observed at a sufficiently low repetition rate of the bunching potential shows a sharp peak in the beginning of the duty-on period and decreases exponentially with time, approaching a value expected without the bunching potential. From this time structure of the current, we could deduce mean residence time of ions in the plasma zone. When the repetition rate of the potential is sufficiently high, the bunched current is observed to be almost constant, its magnitude being determined by the duty factor of the bunching potential and the ionization efficiency of the source. We also describe theoretical formulation of the bunching effect in the above two cases, from which the ionization efficiency can be extracted easily.

元の言語英語
ページ(範囲)154-163
ページ数10
ジャーナルNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
114
発行部数1-2
DOI
出版物ステータス出版済み - 1 1 1996

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bunching
Ion sources
ion sources
Ionization
Plasmas
Electrodes
repetition
Ions
ionization
chambers
formulations
electrodes
ions

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation

これを引用

Beam-bunching in an ECR ion source by the pulsed gating-potential method. / Jeong, S. C.; Oyaizu, M.; Kawakami, H.; Shirakabe, Y.; Ikeda, Nobuo; Nomura, T.

:: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 巻 114, 番号 1-2, 01.01.1996, p. 154-163.

研究成果: ジャーナルへの寄稿記事

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T1 - Beam-bunching in an ECR ion source by the pulsed gating-potential method

AU - Jeong, S. C.

AU - Oyaizu, M.

AU - Kawakami, H.

AU - Shirakabe, Y.

AU - Ikeda, Nobuo

AU - Nomura, T.

PY - 1996/1/1

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N2 - A pulsed gating-potential method for millisecond beam-bunching has successfully been applied for the first time to a single-stage 6.4 GHz ECR ion source. Clear bunching effects were observed when a pulsed alternating potential of a few hundred volts was applied between the ECR chamber of the source and an electrode placed near its exit hole. The bunched current observed at a sufficiently low repetition rate of the bunching potential shows a sharp peak in the beginning of the duty-on period and decreases exponentially with time, approaching a value expected without the bunching potential. From this time structure of the current, we could deduce mean residence time of ions in the plasma zone. When the repetition rate of the potential is sufficiently high, the bunched current is observed to be almost constant, its magnitude being determined by the duty factor of the bunching potential and the ionization efficiency of the source. We also describe theoretical formulation of the bunching effect in the above two cases, from which the ionization efficiency can be extracted easily.

AB - A pulsed gating-potential method for millisecond beam-bunching has successfully been applied for the first time to a single-stage 6.4 GHz ECR ion source. Clear bunching effects were observed when a pulsed alternating potential of a few hundred volts was applied between the ECR chamber of the source and an electrode placed near its exit hole. The bunched current observed at a sufficiently low repetition rate of the bunching potential shows a sharp peak in the beginning of the duty-on period and decreases exponentially with time, approaching a value expected without the bunching potential. From this time structure of the current, we could deduce mean residence time of ions in the plasma zone. When the repetition rate of the potential is sufficiently high, the bunched current is observed to be almost constant, its magnitude being determined by the duty factor of the bunching potential and the ionization efficiency of the source. We also describe theoretical formulation of the bunching effect in the above two cases, from which the ionization efficiency can be extracted easily.

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