Behavior and role of superficial oxygen in Cu for the growth of large single-crystalline graphene

Dong Ding, Pablo Solís-Fernández, Rozan Mohamad Yunus, Hiroki Hibino, Hiroki Ago

研究成果: Contribution to journalArticle査読

21 被引用数 (Scopus)

抄録

Decreasing the nucleation density of graphene grown on copper (Cu) foil by chemical vapor deposition (CVD) is essential for the synthesis of large-area single-crystalline graphene. Here, the behavior of the copper oxide layer and its impact on the graphene growth have been investigated. We found that a small amount of oxygen dissolves into the Cu when the oxide layer decomposes during the heating up in a non-reducing Ar environment. The remaining oxygen in the Cu foil can play an important role in decreasing the graphene nucleation density. The dissolved oxygen can withstand at high temperatures even in reducing H 2 environments without completely losing its effectiveness for maintaining a low graphene nucleation density. However, heating up in a H 2 environment significantly reduces the copper oxide layer during the very first moments of the process at low temperatures, preventing the oxygen to dissolve into the Cu and significantly increasing the nucleation density. These findings will help to improve the graphene growth on Cu catalyst by increasing the grain size while decreasing the grain density.

本文言語英語
ページ(範囲)142-149
ページ数8
ジャーナルApplied Surface Science
408
DOI
出版ステータス出版済み - 6 30 2017

All Science Journal Classification (ASJC) codes

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

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