We have investigated the dose rate dependence of the lateral amorphization of silicon crystals irradiated with 40 keV Si2+ focused ion beams (FIB) as a function of sample temperature. The recovery time of point defects, τ, and the extent of their distribution, d, around the collision cascades produced by impinging ions were evaluated. The amorphous line-width was measured with scanning electron microscopy (SEM) after a selective etching. We have obtained a critical dose rate 1/(τd2) of 1.0 × 1015 cm-2s-1 for radiation at 100°C. The temperature dependence of the critical dose rate suggests that the lateral amorphization is controlled by a simple kinetics of the defects with an activation energy of 0.85 eV. From the value of the activation energy, we speculate that the recovery process of radiation-induced defects is controlled by the migration of interstitial Si atoms.
|ジャーナル||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|出版ステータス||出版済み - 1月 1 1997|
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