Bending gettering of Si crystalline defects

R. Sawada, T. Karaki, J. Watanabe

    研究成果: Contribution to journalArticle査読

    7 被引用数 (Scopus)

    抄録

    Suppression of oxidation-induced stacking faults in a Si wafer, to which bending stress was applied during thermal oxidation, was investigated. Straight dislocations were formed only in the neutral plane of the wafer and were absent at the surfaces where bending stress is greatest. The dislocations were introduced by application of lower bending stress, for a wafer with a great amount of SiO2 precipitates in bulk, and continued to function as sinks for oxidation-induced stacking fault nucleation sites, not only during the first oxidation but also through all subsequent high-temperature treatments. An origin of the dislocations was found based on the SiO2 precipitates in Si bulk. Gettering through bending is described together with the dislocation formation mechanism.

    本文言語英語
    ページ(範囲)6983-6988
    ページ数6
    ジャーナルJournal of Applied Physics
    53
    10
    DOI
    出版ステータス出版済み - 1982

    All Science Journal Classification (ASJC) codes

    • 物理学および天文学(全般)

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