We have developed a method of fabrication for a flexible organic field-effect transistor (OFET), the electrode-peeling transfer. One of the advantageous features of this method is the remarkably flat surface of the prepared polymer dielectric layer. We fabricated various bottom contact OFETs to investigate the correlation of the device structure with the OFET characteristics. Device A was prepared on the flexible substrate by the electrode-peeling transfer. Device B was fabricated on a glass substrate with the same but as-deposited rough polymer insulator film. Device A exhibited a better performance with various organic semiconductors than Device B.
|ジャーナル||Japanese Journal of Applied Physics, Part 2: Letters|
|出版ステータス||出版済み - 8月 1 2003|
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