Benefits of flat polymer dielectric surface loading organic semiconductors in field-effect transistors prepared by electrode-peeling transfer

Takeshi Yasuda, Katsuhiko Fujita, Hiroshi Nakashima, Tetsuo Tsutsui

研究成果: ジャーナルへの寄稿レター査読

7 被引用数 (Scopus)

抄録

We have developed a method of fabrication for a flexible organic field-effect transistor (OFET), the electrode-peeling transfer. One of the advantageous features of this method is the remarkably flat surface of the prepared polymer dielectric layer. We fabricated various bottom contact OFETs to investigate the correlation of the device structure with the OFET characteristics. Device A was prepared on the flexible substrate by the electrode-peeling transfer. Device B was fabricated on a glass substrate with the same but as-deposited rough polymer insulator film. Device A exhibited a better performance with various organic semiconductors than Device B.

本文言語英語
ページ(範囲)L967-L969
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
42
8 A
DOI
出版ステータス出版済み - 8月 1 2003

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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