Beryllium implantation doping of silicon carbide

T. Henkel, Y. Tanaka, N. Kobayashi, Shinichi Nishizawa, S. Hishita

研究成果: ジャーナルへの寄稿Conference article

抄録

Structural properties of beryllium implanted silicon carbide have been investigated by secondary ion mass spectrometry, Rutherford backscattering/channeling, and Raman spectroscopy. Strong redistribution of beryllium has been found after a post-implantation anneal step at temperatures between 1300 °C and 1700 °C. The use of a pre-anneal process at 1000 °C before the high-temperature treatment as well as graphite as a surface encapsulant do not efficiently suppress redistribution of Be in the SiC lattice. The crystalline state of the implanted and annealed material is well recovered after annealing at temperatures above 1400 °C.

元の言語英語
ジャーナルMaterials Science Forum
338
出版物ステータス出版済み - 1 1 2000
イベントICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
継続期間: 10 10 199910 15 1999

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Beryllium
beryllium
Silicon carbide
Ion implantation
silicon carbides
implantation
Doping (additives)
secondary ion mass spectrometry
backscattering
Graphite
Raman spectroscopy
graphite
Rutherford backscattering spectroscopy
Secondary ion mass spectrometry
Crystal lattices
Temperature
annealing
temperature
Structural properties
Annealing

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Henkel, T., Tanaka, Y., Kobayashi, N., Nishizawa, S., & Hishita, S. (2000). Beryllium implantation doping of silicon carbide. Materials Science Forum, 338.

Beryllium implantation doping of silicon carbide. / Henkel, T.; Tanaka, Y.; Kobayashi, N.; Nishizawa, Shinichi; Hishita, S.

:: Materials Science Forum, 巻 338, 01.01.2000.

研究成果: ジャーナルへの寄稿Conference article

Henkel, T, Tanaka, Y, Kobayashi, N, Nishizawa, S & Hishita, S 2000, 'Beryllium implantation doping of silicon carbide', Materials Science Forum, 巻. 338.
Henkel T, Tanaka Y, Kobayashi N, Nishizawa S, Hishita S. Beryllium implantation doping of silicon carbide. Materials Science Forum. 2000 1 1;338.
Henkel, T. ; Tanaka, Y. ; Kobayashi, N. ; Nishizawa, Shinichi ; Hishita, S. / Beryllium implantation doping of silicon carbide. :: Materials Science Forum. 2000 ; 巻 338.
@article{9c9e8ccbbb2349cd877610b0140a6b80,
title = "Beryllium implantation doping of silicon carbide",
abstract = "Structural properties of beryllium implanted silicon carbide have been investigated by secondary ion mass spectrometry, Rutherford backscattering/channeling, and Raman spectroscopy. Strong redistribution of beryllium has been found after a post-implantation anneal step at temperatures between 1300 °C and 1700 °C. The use of a pre-anneal process at 1000 °C before the high-temperature treatment as well as graphite as a surface encapsulant do not efficiently suppress redistribution of Be in the SiC lattice. The crystalline state of the implanted and annealed material is well recovered after annealing at temperatures above 1400 °C.",
author = "T. Henkel and Y. Tanaka and N. Kobayashi and Shinichi Nishizawa and S. Hishita",
year = "2000",
month = "1",
day = "1",
language = "English",
volume = "338",
journal = "Materials Science Forum",
issn = "0255-5476",
publisher = "Trans Tech Publications",

}

TY - JOUR

T1 - Beryllium implantation doping of silicon carbide

AU - Henkel, T.

AU - Tanaka, Y.

AU - Kobayashi, N.

AU - Nishizawa, Shinichi

AU - Hishita, S.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - Structural properties of beryllium implanted silicon carbide have been investigated by secondary ion mass spectrometry, Rutherford backscattering/channeling, and Raman spectroscopy. Strong redistribution of beryllium has been found after a post-implantation anneal step at temperatures between 1300 °C and 1700 °C. The use of a pre-anneal process at 1000 °C before the high-temperature treatment as well as graphite as a surface encapsulant do not efficiently suppress redistribution of Be in the SiC lattice. The crystalline state of the implanted and annealed material is well recovered after annealing at temperatures above 1400 °C.

AB - Structural properties of beryllium implanted silicon carbide have been investigated by secondary ion mass spectrometry, Rutherford backscattering/channeling, and Raman spectroscopy. Strong redistribution of beryllium has been found after a post-implantation anneal step at temperatures between 1300 °C and 1700 °C. The use of a pre-anneal process at 1000 °C before the high-temperature treatment as well as graphite as a surface encapsulant do not efficiently suppress redistribution of Be in the SiC lattice. The crystalline state of the implanted and annealed material is well recovered after annealing at temperatures above 1400 °C.

UR - http://www.scopus.com/inward/record.url?scp=0033721925&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033721925&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033721925

VL - 338

JO - Materials Science Forum

JF - Materials Science Forum

SN - 0255-5476

ER -