Bias-dependent etching of silicon in aqueous ammonia

H. Nojiri, Makoto Uchiyama

研究成果: Contribution to journalArticle査読

3 被引用数 (Scopus)

抄録

The electrochemical characteristics of the bias-dependent controlled etching of silicon in an aqueous ammonia system have been experimentally studied. The experiment is carried out with the three-electrode method. It is found that the open-circuit potential (OCP) and the passivation potential (PP) for the etching shift with changes of operating conditions: flow rate, temperature and concentration of etchant. Additionally, the flatness of the etched surface is improved with an increase of the flow rate and anodic bias supply. Considering these correlations, the operating conditions for non-biased selective etching of one type over the opposite type (non-biased dopant-selective etching) have been found.

本文言語英語
ページ(範囲)167-172
ページ数6
ジャーナルSensors and Actuators: A. Physical
34
2
DOI
出版ステータス出版済み - 1 1 1992

All Science Journal Classification (ASJC) codes

  • 電子工学および電気工学
  • 機械工学
  • 器械工学

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