BMO-Doped REBCO-Coated Conductors for Uniform In-Field Ic by Hot-Wall PLD Process Using IBAD Template

Y. Iijima, K. Kakimoto, M. Igarashi, S. Fujita, W. Hirata, S. Muto, T. Yoshida, Y. Adachi, M. Daibo, K. Naoe, T. Fukuzaki, Kohei Higashikawa, Takanobu Kiss, S. Awaji

研究成果: ジャーナルへの寄稿記事

17 引用 (Scopus)

抄録

BaMO3 (BMO, M: Zr or Hf)-doped REBCO-coated conductors were prepared by Hot-Wall PLD method on IBAD template. The highest Jc was obtained for BaHfO3-doped EuBCO. Quite strong pinning force density (Fp) of 1.6 TN/m3 was observed at 4.2 K, 15 T, for a sample deposited with growth rate of ∼5 nm/s. It had strong c-axis correlated pinning at the temperature above 20 K with the matching field of ∼5 T. A 45-m-long sample was formed by productive high growth rate over 20 nm/s, being consistent with commercial nondoped conductors. It had also large Ic of 1687 A/cm and Fp of 0.96 7 TN/m3 was obtained at 4.2 K, 15 T. The end-to-end longitudinal Ic homogeneity (σ) at 77 K in low field was evaluated to be 2.2% by magnetization. Transport in-fields Ic were also measured for the both end points at 30 K, 2 T, resulting in 1863 and 1883A/cm, respectively.

元の言語英語
記事番号7835658
ジャーナルIEEE Transactions on Applied Superconductivity
27
発行部数4
DOI
出版物ステータス出版済み - 6 1 2017

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Ion beam assisted deposition
Pulsed laser deposition
templates
conductors
homogeneity
Magnetization
magnetization
Temperature
temperature
1-dodecylpyridoxal

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

これを引用

BMO-Doped REBCO-Coated Conductors for Uniform In-Field Ic by Hot-Wall PLD Process Using IBAD Template. / Iijima, Y.; Kakimoto, K.; Igarashi, M.; Fujita, S.; Hirata, W.; Muto, S.; Yoshida, T.; Adachi, Y.; Daibo, M.; Naoe, K.; Fukuzaki, T.; Higashikawa, Kohei; Kiss, Takanobu; Awaji, S.

:: IEEE Transactions on Applied Superconductivity, 巻 27, 番号 4, 7835658, 01.06.2017.

研究成果: ジャーナルへの寄稿記事

Iijima, Y, Kakimoto, K, Igarashi, M, Fujita, S, Hirata, W, Muto, S, Yoshida, T, Adachi, Y, Daibo, M, Naoe, K, Fukuzaki, T, Higashikawa, K, Kiss, T & Awaji, S 2017, 'BMO-Doped REBCO-Coated Conductors for Uniform In-Field Ic by Hot-Wall PLD Process Using IBAD Template', IEEE Transactions on Applied Superconductivity, 巻. 27, 番号 4, 7835658. https://doi.org/10.1109/TASC.2017.2660305
Iijima, Y. ; Kakimoto, K. ; Igarashi, M. ; Fujita, S. ; Hirata, W. ; Muto, S. ; Yoshida, T. ; Adachi, Y. ; Daibo, M. ; Naoe, K. ; Fukuzaki, T. ; Higashikawa, Kohei ; Kiss, Takanobu ; Awaji, S. / BMO-Doped REBCO-Coated Conductors for Uniform In-Field Ic by Hot-Wall PLD Process Using IBAD Template. :: IEEE Transactions on Applied Superconductivity. 2017 ; 巻 27, 番号 4.
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abstract = "BaMO3 (BMO, M: Zr or Hf)-doped REBCO-coated conductors were prepared by Hot-Wall PLD method on IBAD template. The highest Jc was obtained for BaHfO3-doped EuBCO. Quite strong pinning force density (Fp) of 1.6 TN/m3 was observed at 4.2 K, 15 T, for a sample deposited with growth rate of ∼5 nm/s. It had strong c-axis correlated pinning at the temperature above 20 K with the matching field of ∼5 T. A 45-m-long sample was formed by productive high growth rate over 20 nm/s, being consistent with commercial nondoped conductors. It had also large Ic of 1687 A/cm and Fp of 0.96 7 TN/m3 was obtained at 4.2 K, 15 T. The end-to-end longitudinal Ic homogeneity (σ) at 77 K in low field was evaluated to be 2.2{\%} by magnetization. Transport in-fields Ic were also measured for the both end points at 30 K, 2 T, resulting in 1863 and 1883A/cm, respectively.",
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AU - Iijima, Y.

AU - Kakimoto, K.

AU - Igarashi, M.

AU - Fujita, S.

AU - Hirata, W.

AU - Muto, S.

AU - Yoshida, T.

AU - Adachi, Y.

AU - Daibo, M.

AU - Naoe, K.

AU - Fukuzaki, T.

AU - Higashikawa, Kohei

AU - Kiss, Takanobu

AU - Awaji, S.

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N2 - BaMO3 (BMO, M: Zr or Hf)-doped REBCO-coated conductors were prepared by Hot-Wall PLD method on IBAD template. The highest Jc was obtained for BaHfO3-doped EuBCO. Quite strong pinning force density (Fp) of 1.6 TN/m3 was observed at 4.2 K, 15 T, for a sample deposited with growth rate of ∼5 nm/s. It had strong c-axis correlated pinning at the temperature above 20 K with the matching field of ∼5 T. A 45-m-long sample was formed by productive high growth rate over 20 nm/s, being consistent with commercial nondoped conductors. It had also large Ic of 1687 A/cm and Fp of 0.96 7 TN/m3 was obtained at 4.2 K, 15 T. The end-to-end longitudinal Ic homogeneity (σ) at 77 K in low field was evaluated to be 2.2% by magnetization. Transport in-fields Ic were also measured for the both end points at 30 K, 2 T, resulting in 1863 and 1883A/cm, respectively.

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