TY - JOUR
T1 - Bottom-up fabrication of redox-active metal complex oligomer wires on an H-terminated Si(111) surface
AU - Maeda, Hiroaki
AU - Sakamoto, Ryota
AU - Nishimori, Yoshihiko
AU - Sendo, Junya
AU - Toshimitsu, Fumiyuki
AU - Yamanoi, Yoshinori
AU - Nishihara, Hiroshi
PY - 2011/8/14
Y1 - 2011/8/14
N2 - Linear and branched Fe(tpy)2 complex oligomer wires were quantitatively formed on hydrogen-terminated silicon wafers by means of hydrosilylation of ethynylterpyridine and following stepwise coordination reactions, and the redox property of surface-attached species and its photosensitivity can be controlled by the doping density of the silicon wafers.
AB - Linear and branched Fe(tpy)2 complex oligomer wires were quantitatively formed on hydrogen-terminated silicon wafers by means of hydrosilylation of ethynylterpyridine and following stepwise coordination reactions, and the redox property of surface-attached species and its photosensitivity can be controlled by the doping density of the silicon wafers.
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U2 - 10.1039/c1cc12832a
DO - 10.1039/c1cc12832a
M3 - Article
C2 - 21725533
AN - SCOPUS:79960534919
VL - 47
SP - 8644
EP - 8646
JO - Chemical Communications
JF - Chemical Communications
SN - 1359-7345
IS - 30
ER -