抄録
We investigated with ab initio calculations the 3C-, 6H-, 4H- and 2H-SiC polytypes. We discuss the geometry and the energetics of bulk and surface relaxed structures ((0001) Si face and the (000̄1) C face surfaces). The polytype stability is discussed regarding the bulk and surface effects.
| 元の言語 | 英語 |
|---|---|
| ホスト出版物のタイトル | Silicon Carbide and Related Materials 2011, ICSCRM 2011 |
| ページ | 41-44 |
| ページ数 | 4 |
| DOI | |
| 出版物ステータス | 出版済み - 5 28 2012 |
| 外部発表 | Yes |
| イベント | 14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, 米国 継続期間: 9 11 2011 → 9 16 2011 |
出版物シリーズ
| 名前 | Materials Science Forum |
|---|---|
| 巻 | 717-720 |
| ISSN（印刷物） | 0255-5476 |
その他
| その他 | 14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 |
|---|---|
| 国 | 米国 |
| 市 | Cleveland, OH |
| 期間 | 9/11/11 → 9/16/11 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
これを引用
Bulk and surface effects on the polytype stability in SiC crystals. / Mercier, Frédéric; Nishizawa, Shinichi.
Silicon Carbide and Related Materials 2011, ICSCRM 2011. 2012. p. 41-44 (Materials Science Forum; 巻 717-720).研究成果: 著書/レポートタイプへの貢献 › 会議での発言
}
TY - GEN
T1 - Bulk and surface effects on the polytype stability in SiC crystals
AU - Mercier, Frédéric
AU - Nishizawa, Shinichi
PY - 2012/5/28
Y1 - 2012/5/28
N2 - We investigated with ab initio calculations the 3C-, 6H-, 4H- and 2H-SiC polytypes. We discuss the geometry and the energetics of bulk and surface relaxed structures ((0001) Si face and the (000̄1) C face surfaces). The polytype stability is discussed regarding the bulk and surface effects.
AB - We investigated with ab initio calculations the 3C-, 6H-, 4H- and 2H-SiC polytypes. We discuss the geometry and the energetics of bulk and surface relaxed structures ((0001) Si face and the (000̄1) C face surfaces). The polytype stability is discussed regarding the bulk and surface effects.
UR - http://www.scopus.com/inward/record.url?scp=84861380774&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84861380774&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.717-720.41
DO - 10.4028/www.scientific.net/MSF.717-720.41
M3 - Conference contribution
AN - SCOPUS:84861380774
SN - 9783037854198
T3 - Materials Science Forum
SP - 41
EP - 44
BT - Silicon Carbide and Related Materials 2011, ICSCRM 2011
ER -