Bulk and surface effects on the polytype stability in SiC crystals

Frédéric Mercier, Shinichi Nishizawa

研究成果: 著書/レポートタイプへの貢献会議での発言

1 引用 (Scopus)

抄録

We investigated with ab initio calculations the 3C-, 6H-, 4H- and 2H-SiC polytypes. We discuss the geometry and the energetics of bulk and surface relaxed structures ((0001) Si face and the (000̄1) C face surfaces). The polytype stability is discussed regarding the bulk and surface effects.

元の言語英語
ホスト出版物のタイトルSilicon Carbide and Related Materials 2011, ICSCRM 2011
ページ41-44
ページ数4
DOI
出版物ステータス出版済み - 5 28 2012
外部発表Yes
イベント14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, 米国
継続期間: 9 11 20119 16 2011

出版物シリーズ

名前Materials Science Forum
717-720
ISSN(印刷物)0255-5476

その他

その他14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
米国
Cleveland, OH
期間9/11/119/16/11

Fingerprint

Crystals
crystals
Geometry
geometry

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Mercier, F., & Nishizawa, S. (2012). Bulk and surface effects on the polytype stability in SiC crystals. : Silicon Carbide and Related Materials 2011, ICSCRM 2011 (pp. 41-44). (Materials Science Forum; 巻数 717-720). https://doi.org/10.4028/www.scientific.net/MSF.717-720.41

Bulk and surface effects on the polytype stability in SiC crystals. / Mercier, Frédéric; Nishizawa, Shinichi.

Silicon Carbide and Related Materials 2011, ICSCRM 2011. 2012. p. 41-44 (Materials Science Forum; 巻 717-720).

研究成果: 著書/レポートタイプへの貢献会議での発言

Mercier, F & Nishizawa, S 2012, Bulk and surface effects on the polytype stability in SiC crystals. : Silicon Carbide and Related Materials 2011, ICSCRM 2011. Materials Science Forum, 巻. 717-720, pp. 41-44, 14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011, Cleveland, OH, 米国, 9/11/11. https://doi.org/10.4028/www.scientific.net/MSF.717-720.41
Mercier F, Nishizawa S. Bulk and surface effects on the polytype stability in SiC crystals. : Silicon Carbide and Related Materials 2011, ICSCRM 2011. 2012. p. 41-44. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.717-720.41
Mercier, Frédéric ; Nishizawa, Shinichi. / Bulk and surface effects on the polytype stability in SiC crystals. Silicon Carbide and Related Materials 2011, ICSCRM 2011. 2012. pp. 41-44 (Materials Science Forum).
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