TY - GEN
T1 - Bulk and surface effects on the polytype stability in SiC crystals
AU - Mercier, Frédéric
AU - Nishizawa, Shinichi
PY - 2012/5/28
Y1 - 2012/5/28
N2 - We investigated with ab initio calculations the 3C-, 6H-, 4H- and 2H-SiC polytypes. We discuss the geometry and the energetics of bulk and surface relaxed structures ((0001) Si face and the (000̄1) C face surfaces). The polytype stability is discussed regarding the bulk and surface effects.
AB - We investigated with ab initio calculations the 3C-, 6H-, 4H- and 2H-SiC polytypes. We discuss the geometry and the energetics of bulk and surface relaxed structures ((0001) Si face and the (000̄1) C face surfaces). The polytype stability is discussed regarding the bulk and surface effects.
UR - http://www.scopus.com/inward/record.url?scp=84861380774&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84861380774&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.717-720.41
DO - 10.4028/www.scientific.net/MSF.717-720.41
M3 - Conference contribution
AN - SCOPUS:84861380774
SN - 9783037854198
T3 - Materials Science Forum
SP - 41
EP - 44
BT - Silicon Carbide and Related Materials 2011, ICSCRM 2011
T2 - 14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
Y2 - 11 September 2011 through 16 September 2011
ER -