Calculation of lattice constant of 4H-SiC as a function of impurity concentration

Tsubasa Matsumoto, Shinichi Nishizawa, Satoshi Yamasaki

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

19 被引用数 (Scopus)

抄録

Calculations of lattice constant of 4H-SiC and diamond have been carried out. Lattice constant of 4H-SiC trends to decrease when nitrogen concentration increases. On the other hand, lattice constant of 4H-SiC trends to increase when aluminum concentration increases. Lattice constant of boron and phosphorus doped diamond trends to increase when impurity concentration increases. The effect of phosphorus on diamond lattice constant is about six times larger than that of boron.

本文言語英語
ホスト出版物のタイトルSilicon Carbide and Related Materials 2009
ホスト出版物のサブタイトルICSCRM 2009
出版社Trans Tech Publications Ltd
ページ247-250
ページ数4
ISBN(印刷版)0878492798, 9780878492794
DOI
出版ステータス出版済み - 1 1 2010
外部発表はい
イベント13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 - Nurnberg, ドイツ
継続期間: 10 11 200910 16 2009

出版物シリーズ

名前Materials Science Forum
645-648
ISSN(印刷版)0255-5476

その他

その他13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009
Countryドイツ
CityNurnberg
Period10/11/0910/16/09

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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