Calculation of light-hadron induced single-event upset cross sections for semicond uctor memory devices

Taketo Ikeuchi, Yukinobu Watanabe, Weili Sun, Hideki Nakashima

研究成果: ジャーナルへの寄稿学術誌査読

抄録

Light-hadron induced single-event upset (SEU) cross sections for semiconductor memory devices are calculated by the Burst Generation Rate (BGR) method using the LA150 data and JQMD calculation in the incident energy range between 20 MeV and 3 GeV. The calculated results are compared with experimental SEU cross sections, and the validity of the calculation method and the nuclear data used is examined. The range of the incident energy and the atomic and mass numbers of the reaction products that provides the important effects on SEU are investigated.

本文言語英語
ページ(範囲)1380-1383
ページ数4
ジャーナルjournal of nuclear science and technology
39
DOI
出版ステータス出版済み - 8月 2002

!!!All Science Journal Classification (ASJC) codes

  • 核物理学および高エネルギー物理学
  • 原子力エネルギーおよび原子力工学

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