抄録
Light-hadron induced single-event upset (SEU) cross sections for semiconductor memory devices are calculated by the Burst Generation Rate (BGR) method using the LA150 data and JQMD calculation in the incident energy range between 20 MeV and 3 GeV. The calculated results are compared with experimental SEU cross sections, and the validity of the calculation method and the nuclear data used is examined. The range of the incident energy and the atomic and mass numbers of the reaction products that provides the important effects on SEU are investigated.
| 元の言語 | 英語 |
|---|---|
| ページ（範囲） | 1380-1383 |
| ページ数 | 4 |
| ジャーナル | journal of nuclear science and technology |
| 巻 | 39 |
| DOI | |
| 出版物ステータス | 出版済み - 8 2002 |
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All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
これを引用
Calculation of light-hadron induced single-event upset cross sections for semicond uctor memory devices. / Ikeuchi, Taketo; Watanabe, Yukinobu; Sun, Weili; Nakashima, Hideki.
：: journal of nuclear science and technology, 巻 39, 08.2002, p. 1380-1383.研究成果: ジャーナルへの寄稿 › 記事
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TY - JOUR
T1 - Calculation of light-hadron induced single-event upset cross sections for semicond uctor memory devices
AU - Ikeuchi, Taketo
AU - Watanabe, Yukinobu
AU - Sun, Weili
AU - Nakashima, Hideki
PY - 2002/8
Y1 - 2002/8
N2 - Light-hadron induced single-event upset (SEU) cross sections for semiconductor memory devices are calculated by the Burst Generation Rate (BGR) method using the LA150 data and JQMD calculation in the incident energy range between 20 MeV and 3 GeV. The calculated results are compared with experimental SEU cross sections, and the validity of the calculation method and the nuclear data used is examined. The range of the incident energy and the atomic and mass numbers of the reaction products that provides the important effects on SEU are investigated.
AB - Light-hadron induced single-event upset (SEU) cross sections for semiconductor memory devices are calculated by the Burst Generation Rate (BGR) method using the LA150 data and JQMD calculation in the incident energy range between 20 MeV and 3 GeV. The calculated results are compared with experimental SEU cross sections, and the validity of the calculation method and the nuclear data used is examined. The range of the incident energy and the atomic and mass numbers of the reaction products that provides the important effects on SEU are investigated.
UR - http://www.scopus.com/inward/record.url?scp=85010589386&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85010589386&partnerID=8YFLogxK
U2 - 10.1080/00223131.2002.10875362
DO - 10.1080/00223131.2002.10875362
M3 - Article
AN - SCOPUS:85010589386
VL - 39
SP - 1380
EP - 1383
JO - Journal of Nuclear Science and Technology
JF - Journal of Nuclear Science and Technology
SN - 0022-3131
ER -