Calculation of light-hadron induced single-event upset cross sections for semicond uctor memory devices

Taketo Ikeuchi, Yukinobu Watanabe, Weili Sun, Hideki Nakashima

研究成果: ジャーナルへの寄稿記事

抄録

Light-hadron induced single-event upset (SEU) cross sections for semiconductor memory devices are calculated by the Burst Generation Rate (BGR) method using the LA150 data and JQMD calculation in the incident energy range between 20 MeV and 3 GeV. The calculated results are compared with experimental SEU cross sections, and the validity of the calculation method and the nuclear data used is examined. The range of the incident energy and the atomic and mass numbers of the reaction products that provides the important effects on SEU are investigated.

元の言語英語
ページ(範囲)1380-1383
ページ数4
ジャーナルjournal of nuclear science and technology
39
DOI
出版物ステータス出版済み - 8 2002

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single event upsets
Data storage equipment
cross sections
Reaction products
Semiconductor materials
reaction products
bursts
energy

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering

これを引用

Calculation of light-hadron induced single-event upset cross sections for semicond uctor memory devices. / Ikeuchi, Taketo; Watanabe, Yukinobu; Sun, Weili; Nakashima, Hideki.

:: journal of nuclear science and technology, 巻 39, 08.2002, p. 1380-1383.

研究成果: ジャーナルへの寄稿記事

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