抄録
C-axis-oriented epitaxial and preferred-oriented Bi4Ti 3O12(BIT) films were deposited on (100)SrRuO 3//(100)SrTiO3 and (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition. Preferred-oriented films were deposited at 500°C by the sequential introduction of Bi and Ti sources followed by the crystal structure of BIT along c-axis, while the epitaxial films were deposited at 640°C. For the epitaxial films, the relative dielectric constant was almost constant with decreasing the film thickness down to 18 nm and the increase of the electric field of 100 kV/cm. The data of single-axis-oriented film was almost equal to those of epitaxial one. This suggests that not only the epitaxial films but also the single-axis-oriented ones are useful candidates for capacitor applications.
| 元の言語 | 英語 |
|---|---|
| ページ（範囲） | 57-64 |
| ページ数 | 8 |
| ジャーナル | Ceramic Engineering and Science Proceedings |
| 巻 | 24 |
| 発行部数 | 4 |
| 出版物ステータス | 出版済み - 12 8 2003 |
| 外部発表 | Yes |
| イベント | 27th International Cocoa Beach Conference on Advanced Ceramics and Composites: B - Cocoa Beach, FL, 米国 継続期間: 1 26 2003 → 1 31 2003 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Ceramics and Composites
- Materials Chemistry
これを引用
Capacitor applications of c-axis-oriented bismuth layer structured ferroelectric thin films. / Kojima, Takashi; Watanabe, Takayuki; Funakubo, Hiroshi; Sakashita, Yukio; Oikawa, Takahiro.
：: Ceramic Engineering and Science Proceedings, 巻 24, 番号 4, 08.12.2003, p. 57-64.研究成果: ジャーナルへの寄稿 › Conference article
}
TY - JOUR
T1 - Capacitor applications of c-axis-oriented bismuth layer structured ferroelectric thin films
AU - Kojima, Takashi
AU - Watanabe, Takayuki
AU - Funakubo, Hiroshi
AU - Sakashita, Yukio
AU - Oikawa, Takahiro
PY - 2003/12/8
Y1 - 2003/12/8
N2 - C-axis-oriented epitaxial and preferred-oriented Bi4Ti 3O12(BIT) films were deposited on (100)SrRuO 3//(100)SrTiO3 and (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition. Preferred-oriented films were deposited at 500°C by the sequential introduction of Bi and Ti sources followed by the crystal structure of BIT along c-axis, while the epitaxial films were deposited at 640°C. For the epitaxial films, the relative dielectric constant was almost constant with decreasing the film thickness down to 18 nm and the increase of the electric field of 100 kV/cm. The data of single-axis-oriented film was almost equal to those of epitaxial one. This suggests that not only the epitaxial films but also the single-axis-oriented ones are useful candidates for capacitor applications.
AB - C-axis-oriented epitaxial and preferred-oriented Bi4Ti 3O12(BIT) films were deposited on (100)SrRuO 3//(100)SrTiO3 and (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition. Preferred-oriented films were deposited at 500°C by the sequential introduction of Bi and Ti sources followed by the crystal structure of BIT along c-axis, while the epitaxial films were deposited at 640°C. For the epitaxial films, the relative dielectric constant was almost constant with decreasing the film thickness down to 18 nm and the increase of the electric field of 100 kV/cm. The data of single-axis-oriented film was almost equal to those of epitaxial one. This suggests that not only the epitaxial films but also the single-axis-oriented ones are useful candidates for capacitor applications.
UR - http://www.scopus.com/inward/record.url?scp=0344064785&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0344064785&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0344064785
VL - 24
SP - 57
EP - 64
JO - Ceramic Engineering and Science Proceedings
JF - Ceramic Engineering and Science Proceedings
SN - 0196-6219
IS - 4
ER -