Capacitor applications of c-axis-oriented bismuth layer structured ferroelectric thin films

Takashi Kojima, Takayuki Watanabe, Hiroshi Funakubo, Yukio Sakashita, Takahiro Oikawa

研究成果: ジャーナルへの寄稿会議記事査読

4 被引用数 (Scopus)

抄録

C-axis-oriented epitaxial and preferred-oriented Bi4Ti 3O12(BIT) films were deposited on (100)SrRuO 3//(100)SrTiO3 and (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition. Preferred-oriented films were deposited at 500°C by the sequential introduction of Bi and Ti sources followed by the crystal structure of BIT along c-axis, while the epitaxial films were deposited at 640°C. For the epitaxial films, the relative dielectric constant was almost constant with decreasing the film thickness down to 18 nm and the increase of the electric field of 100 kV/cm. The data of single-axis-oriented film was almost equal to those of epitaxial one. This suggests that not only the epitaxial films but also the single-axis-oriented ones are useful candidates for capacitor applications.

本文言語英語
ページ(範囲)57-64
ページ数8
ジャーナルCeramic Engineering and Science Proceedings
24
4
出版ステータス出版済み - 12月 8 2003
外部発表はい
イベント27th International Cocoa Beach Conference on Advanced Ceramics and Composites: B - Cocoa Beach, FL, 米国
継続期間: 1月 26 20031月 31 2003

!!!All Science Journal Classification (ASJC) codes

  • セラミックおよび複合材料
  • 材料化学

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