C-axis-oriented epitaxial and preferred-oriented Bi4Ti 3O12(BIT) films were deposited on (100)SrRuO 3//(100)SrTiO3 and (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition. Preferred-oriented films were deposited at 500°C by the sequential introduction of Bi and Ti sources followed by the crystal structure of BIT along c-axis, while the epitaxial films were deposited at 640°C. For the epitaxial films, the relative dielectric constant was almost constant with decreasing the film thickness down to 18 nm and the increase of the electric field of 100 kV/cm. The data of single-axis-oriented film was almost equal to those of epitaxial one. This suggests that not only the epitaxial films but also the single-axis-oriented ones are useful candidates for capacitor applications.
|ジャーナル||Ceramic Engineering and Science Proceedings|
|出版ステータス||出版済み - 12月 8 2003|
|イベント||27th International Cocoa Beach Conference on Advanced Ceramics and Composites: B - Cocoa Beach, FL, 米国|
継続期間: 1月 26 2003 → 1月 31 2003
!!!All Science Journal Classification (ASJC) codes