TY - JOUR
T1 - Carbon 1s X-ray photoelectron spectra of realistic samples of hydrogen-terminated and oxygen-terminated CVD diamond (111) and (001)
AU - Kono, Shozo
AU - Kageura, Taisuke
AU - Hayashi, Yuya
AU - Ri, Sung Gi
AU - Teraji, Tokuyuki
AU - Takeuchi, Daisuke
AU - Ogura, Masahiko
AU - Kodama, Hideyuki
AU - Sawabe, Atsuhito
AU - Inaba, Masafumi
AU - Hiraiwa, Atsushi
AU - Kawarada, Hiroshi
N1 - Funding Information:
The present work is partly supported by a Grant-in-Aid for Scientific Research (S) (grant number 26220903 ), Grant-in-Aid for Scientific Research (A) (grant number 26246001 ), and Grant-in-Aid for Scientific Research (B) (grant number 15H03980 ) from the Japan Society for the Promotion of Science (JSPS). The authors are grateful to Prof. M. Matsukata of Waseda University for the use of an XPS apparatus. One (S. K.) of the authors is grateful to Prof. Y. Shigesato of Aoyama Gakuin University for the use of an AFM apparatus.
Publisher Copyright:
© 2019 Elsevier B.V.
PY - 2019/3
Y1 - 2019/3
N2 - Key factors in C 1s photoelectron spectroscopy for realistic samples of single crystal diamonds are remarked. Basic equations for angle-dependent photoelectron spectroscopy applied to single crystal diamond samples are described in Appendix A. Carbon 1s photoelectron spectroscopic works so far reported for hydrogen-terminated and oxygen-terminated diamond (001) and (111) samples were reviewed placing special attention on surface C 1s components with reference to the key factors. The results showed diversity in C 1s photoelectron spectra so far reported. We had three specific subjects of the study in C 1s XPS; the first is that we have reconfirmed the phenomenon that surface conductive layers resumed when smooth non-doped CVD C(111)-O samples were annealed in vacuum [Diam.Rela.Mate.18(2009)206]. A single C 1s XPS surface component was found for a smooth C(111)-O sample before the vacuum-anneal, which was attributed to surface carbon atoms in C–O–H bonding. The second subject is that dependence of C 1s XPS spectra on surface sensitivity has been measured for all the samples with different surface roughness of C(001)-O, C(111)-O, C(001)-H, and C(111)-H. The results were converted to the energy difference between the Fermi-level (Ef) and valence band maximum (Ev) on the probing depth from the surface. All the samples showed downward bending of Ev toward the surface. For the C(001)-H samples, this was a reconfirmation of previous work [Surf.Sci.604(2010)1148]. For the C(001)-H and C(111)-H samples, various degrees of downward band bending toward surface were observed and analyzed with two-dimensional band simulation. It was concluded that another source of holes such as shallow acceptors is present in a deeper region of the surface in addition to holes very close to surface caused by the charge-transfer-doping. The third subject is that C 1s XPS spectra for superconducting C(111)-O samples showed a lattice distortion of ~9 monolayers near the surface.
AB - Key factors in C 1s photoelectron spectroscopy for realistic samples of single crystal diamonds are remarked. Basic equations for angle-dependent photoelectron spectroscopy applied to single crystal diamond samples are described in Appendix A. Carbon 1s photoelectron spectroscopic works so far reported for hydrogen-terminated and oxygen-terminated diamond (001) and (111) samples were reviewed placing special attention on surface C 1s components with reference to the key factors. The results showed diversity in C 1s photoelectron spectra so far reported. We had three specific subjects of the study in C 1s XPS; the first is that we have reconfirmed the phenomenon that surface conductive layers resumed when smooth non-doped CVD C(111)-O samples were annealed in vacuum [Diam.Rela.Mate.18(2009)206]. A single C 1s XPS surface component was found for a smooth C(111)-O sample before the vacuum-anneal, which was attributed to surface carbon atoms in C–O–H bonding. The second subject is that dependence of C 1s XPS spectra on surface sensitivity has been measured for all the samples with different surface roughness of C(001)-O, C(111)-O, C(001)-H, and C(111)-H. The results were converted to the energy difference between the Fermi-level (Ef) and valence band maximum (Ev) on the probing depth from the surface. All the samples showed downward bending of Ev toward the surface. For the C(001)-H samples, this was a reconfirmation of previous work [Surf.Sci.604(2010)1148]. For the C(001)-H and C(111)-H samples, various degrees of downward band bending toward surface were observed and analyzed with two-dimensional band simulation. It was concluded that another source of holes such as shallow acceptors is present in a deeper region of the surface in addition to holes very close to surface caused by the charge-transfer-doping. The third subject is that C 1s XPS spectra for superconducting C(111)-O samples showed a lattice distortion of ~9 monolayers near the surface.
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U2 - 10.1016/j.diamond.2019.01.017
DO - 10.1016/j.diamond.2019.01.017
M3 - Article
AN - SCOPUS:85061306787
VL - 93
SP - 105
EP - 130
JO - Diamond and Related Materials
JF - Diamond and Related Materials
SN - 0925-9635
ER -