Carbon concentration and particle precipitation during directional solidification of multicrystalline silicon for solar cells

Lijun Liu, Satoshi Nakano, Koichi Kakimoto

研究成果: ジャーナルへの寄稿記事

90 引用 (Scopus)

抄録

The content and uniformity of carbon and silicon carbide (SiC) precipitates have an important impact on the efficiency of solar cells made of multicrystalline silicon. We established a dynamic model of SiC particle precipitation in molten silicon based on the Si-C phase diagram. Coupling with a transient global model of heat transfer, computations were carried out to clarify the characteristics of carbon segregation and particle formation in a directional solidification process for producing multicrystalline silicon for solar cells. The effects of impurity level in silicon feedstock and solidification process conditions on the distributions of substitutional carbon and SiC precipitates in solidified silicon ingots were investigated. It was shown that the content of SiC particles precipitated in solidified ingots increases markedly in magnitude as well as in space with increase in carbon concentration in silicon feedstock when it exceeds 1.26×1017 atoms/cm3. The distribution of SiC precipitates can be controlled by optimizing the process conditions. SiC precipitates are clustered at the center-upper region in an ingot solidified in a fast-cooling process but at the periphery-upper region for a slow-cooling process.

元の言語英語
ページ(範囲)2192-2197
ページ数6
ジャーナルJournal of Crystal Growth
310
発行部数7-9
DOI
出版物ステータス出版済み - 4 1 2008

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particle precipitation
Silicon
Silicon carbide
silicon carbides
Solidification
Solar cells
Carbon
solar cells
Precipitates
precipitates
carbon
ingots
silicon
Ingots
Feedstocks
Cooling
cooling
dynamic models
carbides
solidification

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

これを引用

Carbon concentration and particle precipitation during directional solidification of multicrystalline silicon for solar cells. / Liu, Lijun; Nakano, Satoshi; Kakimoto, Koichi.

:: Journal of Crystal Growth, 巻 310, 番号 7-9, 01.04.2008, p. 2192-2197.

研究成果: ジャーナルへの寄稿記事

@article{691c1697e00d46aa899689c9849d7ac9,
title = "Carbon concentration and particle precipitation during directional solidification of multicrystalline silicon for solar cells",
abstract = "The content and uniformity of carbon and silicon carbide (SiC) precipitates have an important impact on the efficiency of solar cells made of multicrystalline silicon. We established a dynamic model of SiC particle precipitation in molten silicon based on the Si-C phase diagram. Coupling with a transient global model of heat transfer, computations were carried out to clarify the characteristics of carbon segregation and particle formation in a directional solidification process for producing multicrystalline silicon for solar cells. The effects of impurity level in silicon feedstock and solidification process conditions on the distributions of substitutional carbon and SiC precipitates in solidified silicon ingots were investigated. It was shown that the content of SiC particles precipitated in solidified ingots increases markedly in magnitude as well as in space with increase in carbon concentration in silicon feedstock when it exceeds 1.26×1017 atoms/cm3. The distribution of SiC precipitates can be controlled by optimizing the process conditions. SiC precipitates are clustered at the center-upper region in an ingot solidified in a fast-cooling process but at the periphery-upper region for a slow-cooling process.",
author = "Lijun Liu and Satoshi Nakano and Koichi Kakimoto",
year = "2008",
month = "4",
day = "1",
doi = "10.1016/j.jcrysgro.2007.11.165",
language = "English",
volume = "310",
pages = "2192--2197",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "7-9",

}

TY - JOUR

T1 - Carbon concentration and particle precipitation during directional solidification of multicrystalline silicon for solar cells

AU - Liu, Lijun

AU - Nakano, Satoshi

AU - Kakimoto, Koichi

PY - 2008/4/1

Y1 - 2008/4/1

N2 - The content and uniformity of carbon and silicon carbide (SiC) precipitates have an important impact on the efficiency of solar cells made of multicrystalline silicon. We established a dynamic model of SiC particle precipitation in molten silicon based on the Si-C phase diagram. Coupling with a transient global model of heat transfer, computations were carried out to clarify the characteristics of carbon segregation and particle formation in a directional solidification process for producing multicrystalline silicon for solar cells. The effects of impurity level in silicon feedstock and solidification process conditions on the distributions of substitutional carbon and SiC precipitates in solidified silicon ingots were investigated. It was shown that the content of SiC particles precipitated in solidified ingots increases markedly in magnitude as well as in space with increase in carbon concentration in silicon feedstock when it exceeds 1.26×1017 atoms/cm3. The distribution of SiC precipitates can be controlled by optimizing the process conditions. SiC precipitates are clustered at the center-upper region in an ingot solidified in a fast-cooling process but at the periphery-upper region for a slow-cooling process.

AB - The content and uniformity of carbon and silicon carbide (SiC) precipitates have an important impact on the efficiency of solar cells made of multicrystalline silicon. We established a dynamic model of SiC particle precipitation in molten silicon based on the Si-C phase diagram. Coupling with a transient global model of heat transfer, computations were carried out to clarify the characteristics of carbon segregation and particle formation in a directional solidification process for producing multicrystalline silicon for solar cells. The effects of impurity level in silicon feedstock and solidification process conditions on the distributions of substitutional carbon and SiC precipitates in solidified silicon ingots were investigated. It was shown that the content of SiC particles precipitated in solidified ingots increases markedly in magnitude as well as in space with increase in carbon concentration in silicon feedstock when it exceeds 1.26×1017 atoms/cm3. The distribution of SiC precipitates can be controlled by optimizing the process conditions. SiC precipitates are clustered at the center-upper region in an ingot solidified in a fast-cooling process but at the periphery-upper region for a slow-cooling process.

UR - http://www.scopus.com/inward/record.url?scp=41449109584&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=41449109584&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2007.11.165

DO - 10.1016/j.jcrysgro.2007.11.165

M3 - Article

AN - SCOPUS:41449109584

VL - 310

SP - 2192

EP - 2197

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 7-9

ER -