Carbon monoxide concentrations in a Czochralski growth furnace

Y. Miyamura, H. Harada, S. Nakano, S. Nishizawa, Koichi Kakimoto

研究成果: Contribution to journalArticle査読

抄録

High-performance power devices require silicon crystals with long minority carrier lifetimes and, subsequently, low carbon concentrations. This paper reports in-situ measurements of carbon monoxide (CO) in a Czochralski growth furnace used for the growth of single-crystal silicon. During the heating and melting processes, the major causes of CO gas generation are (i) outgassing from carbon parts inside the furnace, (ii) reactions between the quartz and carbon crucible, and (iii) reactions between the silicon melt and quartz crucible. By conducting heating experiments with and without polysilicon and quartz crucibles, we successfully measured the independent CO generation contributions of causes (i), (ii), and (iii) listed above. The outgassing process generated CO gas during the heating process of the raw material. CO generated during the melting process of the raw material was attributed to reactions between (ii), the quartz and carbon, and (iii), the silicon melt and carbon parts, which occurred after CO outgassing from carbon parts in the furnace.

本文言語英語
論文番号126015
ジャーナルJournal of Crystal Growth
558
DOI
出版ステータス出版済み - 3 15 2021

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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