Carbonization of SIMOX substrates for fabrication of single-crystal SiC-on-insulator

S. Harada, Makoto Arita, Yoshifumi Ikoma, T. Motooka

    研究成果: Contribution to journalArticle査読

    抄録

    We have developed a new method for fabrication of single-crystal SiC-on-insulator using SIMOX (Separation by IMplanted OXygen) substrates. Carbonization of surface Si of SIMOX wafers induced cavities between the SiC and Si layers which resulted in low-quality SiC-on-insulator. On the other hand, crystalline SiC layers were formed on SIMOX substrates without cavities at SiC/Si interfaces by using CVD of SiC on as-implanted SIMOX substrates at 900 °C followed by N2 annealing at 1350 °C.

    本文言語英語
    ページ(範囲)297-300
    ジャーナルMaterials Science Forum
    338-342
    出版ステータス出版済み - 2000

    All Science Journal Classification (ASJC) codes

    • 材料科学(全般)
    • 凝縮系物理学
    • 材料力学
    • 機械工学

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