Carbonization of SIMOX substrates for fabrication of single-crystal SiC-on-insulator

S. Harada, Makoto Arita, Yoshifumi Ikoma, T. Motooka

研究成果: ジャーナルへの寄稿記事

抜粋

We have developed a new method for fabrication of single-crystal SiC-on-insulator using SIMOX (Separation by IMplanted OXygen) substrates. Carbonization of surface Si of SIMOX wafers induced cavities between the SiC and Si layers which resulted in low-quality SiC-on-insulator. On the other hand, crystalline SiC layers were formed on SIMOX substrates without cavities at SiC/Si interfaces by using CVD of SiC on as-implanted SIMOX substrates at 900 °C followed by N2 annealing at 1350 °C.

元の言語英語
ページ(範囲)297-300
ジャーナルMaterials Science Forum
338-342
出版物ステータス出版済み - 2000

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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