Carrier generation at ferroelectric phase transitions evidenced in conductivity-overshooting

D. Matsumoto, Y. Urakami, Y. Watanabe, T. Arai, S. W. Cheong

研究成果: ジャーナルへの寄稿Conference article

抜粋

By studying the change of the current through stoichiometric undoped BaTiO3 with time, we have examined whether the conductivity peaks of BaTiO3 single crystals near the bulk phase transitions are due to a real conduction of electrons or holes through the samples or the fake current due to ferroelectric domain motion. The difference (δQ) between integrated current at temperatures (388 K and 400 K) above and below TC exceeds 2PS. The observation that at 2057s ρ is still evidently enhanced shows that this effect is due to real conduction. Because the charge released by the switching cannot exceed 2PS ≈ 35 μC/cm2 at 388 K.

元の言語英語
ページ(範囲)18-21
ページ数4
ジャーナルFerroelectrics
369
発行部数1 PART 3
DOI
出版物ステータス出版済み - 12 1 2008
イベント11th European Meeting on Ferroelectricity, EMF-2007 - Bled, スロベニア
継続期間: 9 3 20079 7 2007

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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