Carrier type dependence on spatial asymmetry of unipolar resistive switching of metal oxides

Kazuki Nagashima; Takeshi Yanagida; Masaki Kanai; Umberto Celano; Sakon Rahong; Gang Meng; Fuwei Zhuge; Yong He; Bae Ho Park; Tomoji Kawai

doi:10.1063/1.4826558

Carrier type dependence on spatial asymmetry of unipolar resistive switching of metal oxides

Kazuki Nagashima, Takeshi Yanagida, Masaki Kanai, Umberto Celano, Sakon Rahong, Gang Meng, Fuwei Zhuge, Yong He, Bae Ho Park, Tomoji Kawai

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

21 被引用数 (Scopus)

抄録

We report a carrier type dependence on the spatial asymmetry of unipolar resistive switching for various metal oxides, including NiO_x, CoO_x, TiO_2-x, YSZ, and SnO_2- _x. n-type oxides show a unipolar resistive switching at the anode side whereas p-type oxides switch at the cathode side. During the forming process, the electrical conduction path of p-type oxides extends from the anode to cathode while that of n-type oxides forms from the cathode to anode. The carrier type of switching oxide layer critically determines the spatial inhomogeneity of unipolar resistive switching during the forming process possibly triggered via the oxygen ion drift.

本文言語	英語
論文番号	173506
ジャーナル	Applied Physics Letters
巻	103
号	17
DOI	https://doi.org/10.1063/1.4826558
出版ステータス	出版済み - 10月 21 2013
外部発表	はい

!!!All Science Journal Classification (ASJC) codes

物理学および天文学（その他）

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10.1063/1.4826558

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title = "Carrier type dependence on spatial asymmetry of unipolar resistive switching of metal oxides",

abstract = "We report a carrier type dependence on the spatial asymmetry of unipolar resistive switching for various metal oxides, including NiOx, CoOx, TiO2-x, YSZ, and SnO2- x. n-type oxides show a unipolar resistive switching at the anode side whereas p-type oxides switch at the cathode side. During the forming process, the electrical conduction path of p-type oxides extends from the anode to cathode while that of n-type oxides forms from the cathode to anode. The carrier type of switching oxide layer critically determines the spatial inhomogeneity of unipolar resistive switching during the forming process possibly triggered via the oxygen ion drift.",

author = "Kazuki Nagashima and Takeshi Yanagida and Masaki Kanai and Umberto Celano and Sakon Rahong and Gang Meng and Fuwei Zhuge and Yong He and {Ho Park}, Bae and Tomoji Kawai",

note = "Funding Information: This study was supported by NEXT. T.K. was supported by FIRST program. B.H.P. was supported by the NRF grant funded by the Korea government (MSIP) (No. 2013R1A3A2042120). K.N. was supported by Grant-in-Aid for Challenging Exploratory Research (No. 24651138).",

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doi = "10.1063/1.4826558",

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T1 - Carrier type dependence on spatial asymmetry of unipolar resistive switching of metal oxides

AU - Nagashima, Kazuki

AU - Yanagida, Takeshi

AU - Kanai, Masaki

AU - Celano, Umberto

AU - Rahong, Sakon

AU - Meng, Gang

AU - Zhuge, Fuwei

AU - He, Yong

AU - Ho Park, Bae

AU - Kawai, Tomoji

N1 - Funding Information: This study was supported by NEXT. T.K. was supported by FIRST program. B.H.P. was supported by the NRF grant funded by the Korea government (MSIP) (No. 2013R1A3A2042120). K.N. was supported by Grant-in-Aid for Challenging Exploratory Research (No. 24651138).

PY - 2013/10/21

Y1 - 2013/10/21

N2 - We report a carrier type dependence on the spatial asymmetry of unipolar resistive switching for various metal oxides, including NiOx, CoOx, TiO2-x, YSZ, and SnO2- x. n-type oxides show a unipolar resistive switching at the anode side whereas p-type oxides switch at the cathode side. During the forming process, the electrical conduction path of p-type oxides extends from the anode to cathode while that of n-type oxides forms from the cathode to anode. The carrier type of switching oxide layer critically determines the spatial inhomogeneity of unipolar resistive switching during the forming process possibly triggered via the oxygen ion drift.

AB - We report a carrier type dependence on the spatial asymmetry of unipolar resistive switching for various metal oxides, including NiOx, CoOx, TiO2-x, YSZ, and SnO2- x. n-type oxides show a unipolar resistive switching at the anode side whereas p-type oxides switch at the cathode side. During the forming process, the electrical conduction path of p-type oxides extends from the anode to cathode while that of n-type oxides forms from the cathode to anode. The carrier type of switching oxide layer critically determines the spatial inhomogeneity of unipolar resistive switching during the forming process possibly triggered via the oxygen ion drift.

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JF - Applied Physics Letters

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Carrier type dependence on spatial asymmetry of unipolar resistive switching of metal oxides

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!!!All Science Journal Classification (ASJC) codes

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