Carrier type dependence on spatial asymmetry of unipolar resistive switching of metal oxides

Kazuki Nagashima, Takeshi Yanagida, Masaki Kanai, Umberto Celano, Sakon Rahong, Gang Meng, Fuwei Zhuge, Yong He, Bae Ho Park, Tomoji Kawai

研究成果: Contribution to journalArticle査読

19 被引用数 (Scopus)

抄録

We report a carrier type dependence on the spatial asymmetry of unipolar resistive switching for various metal oxides, including NiOx, CoOx, TiO2-x, YSZ, and SnO2- x. n-type oxides show a unipolar resistive switching at the anode side whereas p-type oxides switch at the cathode side. During the forming process, the electrical conduction path of p-type oxides extends from the anode to cathode while that of n-type oxides forms from the cathode to anode. The carrier type of switching oxide layer critically determines the spatial inhomogeneity of unipolar resistive switching during the forming process possibly triggered via the oxygen ion drift.

本文言語英語
論文番号173506
ジャーナルApplied Physics Letters
103
17
DOI
出版ステータス出版済み - 10 21 2013
外部発表はい

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

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