Catalyst-free synthesis of vertically-aligned ZnO nanowires by nanoparticle-assisted pulsed laser deposition

R. Q. Guo, J. Nishimura, M. Matsumoto, Daisuke Nakamura, T. Okada

研究成果: ジャーナルへの寄稿記事

41 引用 (Scopus)

抄録

Vertically aligned ZnO nanowires have been successfully synthesized on c-cut sapphire substrates by a catalyst-free nanoparticle-assisted pulsed-laser ablation deposition (NAPLD) in Ar and N2 background gases. In NAPLD, the nanoparticles formed in the background gas by laser ablation are used for the growth of the nanowires. The surface density of the nanowires can be controlled by varying the density of nanoparticles, which is in turn achieved by varying ablation laser parameters such as the energy and the repetition rate. When single ZnO nanowire synthesized in a N2 background gas was excited by 355 nm laser-pulse with a pulse-width of 8 ns, stimulated emission was clearly observed, indicating high quality of the nanowire.

元の言語英語
ページ(範囲)843-847
ページ数5
ジャーナルApplied Physics A: Materials Science and Processing
93
発行部数4
DOI
出版物ステータス出版済み - 12 1 2008

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Pulsed laser deposition
Nanowires
pulsed laser deposition
Laser ablation
nanowires
laser ablation
Nanoparticles
catalysts
nanoparticles
Catalysts
synthesis
Gases
Pulsed lasers
Laser pulses
pulsed lasers
gases
Stimulated emission
Aluminum Oxide
stimulated emission
Sapphire

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Chemistry(all)

これを引用

Catalyst-free synthesis of vertically-aligned ZnO nanowires by nanoparticle-assisted pulsed laser deposition. / Guo, R. Q.; Nishimura, J.; Matsumoto, M.; Nakamura, Daisuke; Okada, T.

:: Applied Physics A: Materials Science and Processing, 巻 93, 番号 4, 01.12.2008, p. 843-847.

研究成果: ジャーナルへの寄稿記事

@article{c5924b6b41dc43ada8e4983ee983a585,
title = "Catalyst-free synthesis of vertically-aligned ZnO nanowires by nanoparticle-assisted pulsed laser deposition",
abstract = "Vertically aligned ZnO nanowires have been successfully synthesized on c-cut sapphire substrates by a catalyst-free nanoparticle-assisted pulsed-laser ablation deposition (NAPLD) in Ar and N2 background gases. In NAPLD, the nanoparticles formed in the background gas by laser ablation are used for the growth of the nanowires. The surface density of the nanowires can be controlled by varying the density of nanoparticles, which is in turn achieved by varying ablation laser parameters such as the energy and the repetition rate. When single ZnO nanowire synthesized in a N2 background gas was excited by 355 nm laser-pulse with a pulse-width of 8 ns, stimulated emission was clearly observed, indicating high quality of the nanowire.",
author = "Guo, {R. Q.} and J. Nishimura and M. Matsumoto and Daisuke Nakamura and T. Okada",
year = "2008",
month = "12",
day = "1",
doi = "10.1007/s00339-008-4791-9",
language = "English",
volume = "93",
pages = "843--847",
journal = "Applied Physics",
issn = "0340-3793",
publisher = "Springer Heidelberg",
number = "4",

}

TY - JOUR

T1 - Catalyst-free synthesis of vertically-aligned ZnO nanowires by nanoparticle-assisted pulsed laser deposition

AU - Guo, R. Q.

AU - Nishimura, J.

AU - Matsumoto, M.

AU - Nakamura, Daisuke

AU - Okada, T.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - Vertically aligned ZnO nanowires have been successfully synthesized on c-cut sapphire substrates by a catalyst-free nanoparticle-assisted pulsed-laser ablation deposition (NAPLD) in Ar and N2 background gases. In NAPLD, the nanoparticles formed in the background gas by laser ablation are used for the growth of the nanowires. The surface density of the nanowires can be controlled by varying the density of nanoparticles, which is in turn achieved by varying ablation laser parameters such as the energy and the repetition rate. When single ZnO nanowire synthesized in a N2 background gas was excited by 355 nm laser-pulse with a pulse-width of 8 ns, stimulated emission was clearly observed, indicating high quality of the nanowire.

AB - Vertically aligned ZnO nanowires have been successfully synthesized on c-cut sapphire substrates by a catalyst-free nanoparticle-assisted pulsed-laser ablation deposition (NAPLD) in Ar and N2 background gases. In NAPLD, the nanoparticles formed in the background gas by laser ablation are used for the growth of the nanowires. The surface density of the nanowires can be controlled by varying the density of nanoparticles, which is in turn achieved by varying ablation laser parameters such as the energy and the repetition rate. When single ZnO nanowire synthesized in a N2 background gas was excited by 355 nm laser-pulse with a pulse-width of 8 ns, stimulated emission was clearly observed, indicating high quality of the nanowire.

UR - http://www.scopus.com/inward/record.url?scp=54549111189&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=54549111189&partnerID=8YFLogxK

U2 - 10.1007/s00339-008-4791-9

DO - 10.1007/s00339-008-4791-9

M3 - Article

AN - SCOPUS:54549111189

VL - 93

SP - 843

EP - 847

JO - Applied Physics

JF - Applied Physics

SN - 0340-3793

IS - 4

ER -