Challenges of 4H-SiC MOSFETs on the C(000-1) face toward the achievement of ultra low on-resistance

K. Fukuda, S. Harada, J. Senzaki, M. Okamoto, Y. Tanaka, A. Kinoshita, R. Kosugi, K. Kojima, M. Kato, A. Shimozato, K. Suzuki, Y. Hayashi, K. Takao, T. Kato, S. Nishizawa, T. Yatsuo, H. Okumura, H. Ohashi, K. Arai

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

The C(000-1) face of 4H-SiC has a lot of advantages for the power device fabrication such as the highest oxidation ratio and a smooth surface. However, the DMOS type power MOSFETs on the C(000-1) face have not been realized because of the difficulty of epitaxial growth and of high quality MOS interface formation. We have systematically investigated the device fabrication techniques for power MOSFETs on the C(000-1) face, and succeeded with the IEMOS which have blocking voltage of 660V and an on-resistance of 1.8mΩcm2 and excellent dynamic characteristics.

本文言語英語
ホスト出版物のタイトルSilicon Carbide and Related Materials 2007
編集者Akira Suzuki, Hajime Okumura, Kenji Fukuda, Shin-ichi Nishizawa, Tsunenobu Kimoto, Takashi Fuyuki
出版社Trans Tech Publications Ltd
ページ907-912
ページ数6
ISBN(印刷版)9780878493579
DOI
出版ステータス出版済み - 2009
外部発表はい
イベント12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, 日本
継続期間: 10 14 200710 19 2007

出版物シリーズ

名前Materials Science Forum
600-603
ISSN(印刷版)0255-5476
ISSN(電子版)1662-9752

その他

その他12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
Country日本
CityOtsu
Period10/14/0710/19/07

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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