Challenges of 4H-SiC MOSFETs on the C(000-1) face toward the achievement of ultra low on-resistance

K. Fukuda, S. Harada, J. Senzaki, M. Okamoto, Y. Tanaka, A. Kinoshita, R. Kosugi, K. Kojima, M. Kato, A. Shimozato, K. Suzuki, Y. Hayashi, K. Takao, T. Kato, S. Nishizawa, T. Yatsuo, H. Okumura, H. Ohashi, K. Arai

研究成果: ジャーナルへの寄稿Conference article

抄録

The C(000-1) face of 4H-SiC has a lot of advantages for the power device fabrication such as the highest oxidation ratio and a smooth surface. However, the DMOS type power MOSFETs on the C(000-1) face have not been realized because of the difficulty of epitaxial growth and of high quality MOS interface formation. We have systematically investigated the device fabrication techniques for power MOSFETs on the C(000-1) face, and succeeded with the IEMOS which have blocking voltage of 660V and an on-resistance of 1.8mΩcm2 and excellent dynamic characteristics.

元の言語英語
ページ(範囲)907-912
ページ数6
ジャーナルMaterials Science Forum
600-603
DOI
出版物ステータス出版済み - 4 10 2009
イベント12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, 日本
継続期間: 10 14 200710 19 2007

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field effect transistors
Fabrication
fabrication
Epitaxial growth
dynamic characteristics
Oxidation
oxidation
Electric potential
electric potential
Power MOSFET

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Fukuda, K., Harada, S., Senzaki, J., Okamoto, M., Tanaka, Y., Kinoshita, A., ... Arai, K. (2009). Challenges of 4H-SiC MOSFETs on the C(000-1) face toward the achievement of ultra low on-resistance. Materials Science Forum, 600-603, 907-912. https://doi.org/10.4028/3-908453-11-9.907

Challenges of 4H-SiC MOSFETs on the C(000-1) face toward the achievement of ultra low on-resistance. / Fukuda, K.; Harada, S.; Senzaki, J.; Okamoto, M.; Tanaka, Y.; Kinoshita, A.; Kosugi, R.; Kojima, K.; Kato, M.; Shimozato, A.; Suzuki, K.; Hayashi, Y.; Takao, K.; Kato, T.; Nishizawa, S.; Yatsuo, T.; Okumura, H.; Ohashi, H.; Arai, K.

:: Materials Science Forum, 巻 600-603, 10.04.2009, p. 907-912.

研究成果: ジャーナルへの寄稿Conference article

Fukuda, K, Harada, S, Senzaki, J, Okamoto, M, Tanaka, Y, Kinoshita, A, Kosugi, R, Kojima, K, Kato, M, Shimozato, A, Suzuki, K, Hayashi, Y, Takao, K, Kato, T, Nishizawa, S, Yatsuo, T, Okumura, H, Ohashi, H & Arai, K 2009, 'Challenges of 4H-SiC MOSFETs on the C(000-1) face toward the achievement of ultra low on-resistance', Materials Science Forum, 巻. 600-603, pp. 907-912. https://doi.org/10.4028/3-908453-11-9.907
Fukuda, K. ; Harada, S. ; Senzaki, J. ; Okamoto, M. ; Tanaka, Y. ; Kinoshita, A. ; Kosugi, R. ; Kojima, K. ; Kato, M. ; Shimozato, A. ; Suzuki, K. ; Hayashi, Y. ; Takao, K. ; Kato, T. ; Nishizawa, S. ; Yatsuo, T. ; Okumura, H. ; Ohashi, H. ; Arai, K. / Challenges of 4H-SiC MOSFETs on the C(000-1) face toward the achievement of ultra low on-resistance. :: Materials Science Forum. 2009 ; 巻 600-603. pp. 907-912.
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abstract = "The C(000-1) face of 4H-SiC has a lot of advantages for the power device fabrication such as the highest oxidation ratio and a smooth surface. However, the DMOS type power MOSFETs on the C(000-1) face have not been realized because of the difficulty of epitaxial growth and of high quality MOS interface formation. We have systematically investigated the device fabrication techniques for power MOSFETs on the C(000-1) face, and succeeded with the IEMOS which have blocking voltage of 660V and an on-resistance of 1.8mΩcm2 and excellent dynamic characteristics.",
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AU - Okamoto, M.

AU - Tanaka, Y.

AU - Kinoshita, A.

AU - Kosugi, R.

AU - Kojima, K.

AU - Kato, M.

AU - Shimozato, A.

AU - Suzuki, K.

AU - Hayashi, Y.

AU - Takao, K.

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AU - Nishizawa, S.

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AU - Okumura, H.

AU - Ohashi, H.

AU - Arai, K.

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