TY - JOUR
T1 - Change in electrical resistivity of commercial purity aluminium severely plastic deformed
AU - Miyajima, Yoji
AU - Komatsu, Shin Ya
AU - Mitsuhara, Masatoshi
AU - Hata, Satoshi
AU - Nakashima, Hideharu
AU - Tsuji, Nobuhiro
N1 - Funding Information:
The STEM observation was supported by the Nanotechnology Support Project of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan. Authors would like to thank the assistance by K. Ura, A. Goto, Y. Marutani, and Y. Murata for the resistivity measurement in Kansai University.
PY - 2010/11
Y1 - 2010/11
N2 - Commercial purity aluminium sheets were severely plastic deformed by accumulative roll bonding (ARB). Changes in electrical resistivity at 77 K and microstructure during the ARB process were traced up to 12 cycles, which corresponded to an equivalent strain of 10. The resistivity at 77 K increased with increasing number of ARB cycles, then saturated after about the sixth ARB cycle with a maximum increment of resistivity from starting material of about 1.1 n m. Since lattice defects affect the resistivity of metals, the internal dislocation density and the density of grain boundaries were evaluated from scanning transmission electron microscopy images using Ham's method and grain boundary maps obtained from electron back-scattering diffraction, respectively. The relationship between the change in resistivity and the lattice defects is discussed.
AB - Commercial purity aluminium sheets were severely plastic deformed by accumulative roll bonding (ARB). Changes in electrical resistivity at 77 K and microstructure during the ARB process were traced up to 12 cycles, which corresponded to an equivalent strain of 10. The resistivity at 77 K increased with increasing number of ARB cycles, then saturated after about the sixth ARB cycle with a maximum increment of resistivity from starting material of about 1.1 n m. Since lattice defects affect the resistivity of metals, the internal dislocation density and the density of grain boundaries were evaluated from scanning transmission electron microscopy images using Ham's method and grain boundary maps obtained from electron back-scattering diffraction, respectively. The relationship between the change in resistivity and the lattice defects is discussed.
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U2 - 10.1080/14786435.2010.510453
DO - 10.1080/14786435.2010.510453
M3 - Article
AN - SCOPUS:77957930463
SN - 1478-6435
VL - 90
SP - 4475
EP - 4488
JO - Philosophical Magazine
JF - Philosophical Magazine
IS - 34
ER -