TY - GEN
T1 - Characteristic modulation of silicon MOSFETs and single electron transistors with a movable gate electrode
AU - Park, J. S.
AU - Saraya, T.
AU - Miyaji, K.
AU - Shimizu, K.
AU - Higo, A.
AU - Takahashi, K.
AU - Yi, Y. H.
AU - Toshiyoshi, H.
AU - Hirarnoto, T.
PY - 2008
Y1 - 2008
N2 - The silicon MOSFET and single-electron-transistor (SET) with a movable gate electrode (MGE) are reported. For the first time, the modulation of the pull-in voltage, where subthreshold swing (SS) is much steeper than 60mV/dec, is experimentally demonstrated in MGE MOSFET using an additional electrode. The modulation of FWHM and peak position of Coulomb blockade oscillation (CBO) by tuning capacitance of SET is also experimentally demonstrated for the first time.
AB - The silicon MOSFET and single-electron-transistor (SET) with a movable gate electrode (MGE) are reported. For the first time, the modulation of the pull-in voltage, where subthreshold swing (SS) is much steeper than 60mV/dec, is experimentally demonstrated in MGE MOSFET using an additional electrode. The modulation of FWHM and peak position of Coulomb blockade oscillation (CBO) by tuning capacitance of SET is also experimentally demonstrated for the first time.
UR - http://www.scopus.com/inward/record.url?scp=77949961827&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77949961827&partnerID=8YFLogxK
U2 - 10.1109/SNW.2008.5418442
DO - 10.1109/SNW.2008.5418442
M3 - Conference contribution
AN - SCOPUS:77949961827
SN - 9781424420711
T3 - IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
BT - IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
T2 - IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
Y2 - 15 June 2008 through 16 June 2008
ER -