Characteristic modulation of silicon MOSFETs and single electron transistors with a movable gate electrode

J. S. Park, T. Saraya, K. Miyaji, K. Shimizu, A. Higo, Koji Takahashi, Y. H. Yi, H. Toshiyoshi, T. Hirarnoto

研究成果: 著書/レポートタイプへの貢献会議での発言

2 引用 (Scopus)

抄録

The silicon MOSFET and single-electron-transistor (SET) with a movable gate electrode (MGE) are reported. For the first time, the modulation of the pull-in voltage, where subthreshold swing (SS) is much steeper than 60mV/dec, is experimentally demonstrated in MGE MOSFET using an additional electrode. The modulation of FWHM and peak position of Coulomb blockade oscillation (CBO) by tuning capacitance of SET is also experimentally demonstrated for the first time.

元の言語英語
ホスト出版物のタイトルIEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
DOI
出版物ステータス出版済み - 2008
外部発表Yes
イベントIEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 - Honolulu, HI, 米国
継続期間: 6 15 20086 16 2008

その他

その他IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
米国
Honolulu, HI
期間6/15/086/16/08

Fingerprint

Single electron transistors
Gates (transistor)
Modulation
Silicon
Electrodes
Coulomb blockade
Full width at half maximum
Capacitance
Tuning
Electric potential

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

これを引用

Park, J. S., Saraya, T., Miyaji, K., Shimizu, K., Higo, A., Takahashi, K., ... Hirarnoto, T. (2008). Characteristic modulation of silicon MOSFETs and single electron transistors with a movable gate electrode. : IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 [5418442] https://doi.org/10.1109/SNW.2008.5418442

Characteristic modulation of silicon MOSFETs and single electron transistors with a movable gate electrode. / Park, J. S.; Saraya, T.; Miyaji, K.; Shimizu, K.; Higo, A.; Takahashi, Koji; Yi, Y. H.; Toshiyoshi, H.; Hirarnoto, T.

IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008. 2008. 5418442.

研究成果: 著書/レポートタイプへの貢献会議での発言

Park, JS, Saraya, T, Miyaji, K, Shimizu, K, Higo, A, Takahashi, K, Yi, YH, Toshiyoshi, H & Hirarnoto, T 2008, Characteristic modulation of silicon MOSFETs and single electron transistors with a movable gate electrode. : IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008., 5418442, IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008, Honolulu, HI, 米国, 6/15/08. https://doi.org/10.1109/SNW.2008.5418442
Park JS, Saraya T, Miyaji K, Shimizu K, Higo A, Takahashi K その他. Characteristic modulation of silicon MOSFETs and single electron transistors with a movable gate electrode. : IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008. 2008. 5418442 https://doi.org/10.1109/SNW.2008.5418442
Park, J. S. ; Saraya, T. ; Miyaji, K. ; Shimizu, K. ; Higo, A. ; Takahashi, Koji ; Yi, Y. H. ; Toshiyoshi, H. ; Hirarnoto, T. / Characteristic modulation of silicon MOSFETs and single electron transistors with a movable gate electrode. IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008. 2008.
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AU - Saraya, T.

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AU - Takahashi, Koji

AU - Yi, Y. H.

AU - Toshiyoshi, H.

AU - Hirarnoto, T.

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